The near ultraviolet quantum yield of silicon

Abstract

New values for the quantum yield of silicon in the 3 to 5 eV spectral region are derived from reflectance and photoresponse measurements on oxide/p+/n/n+ photodiode structures. The new values fall between high and low estimates derived from a recent model of impact-ionization phenomena due to Alig, Bloom, and Struck. A prominent peak in the new spectrum near 4.5 eV is attributed to the way the photon energy in excess of the band-gap energy is distributed between the photogenerated electrons and holes at different photon energies due to the band structure.

First Dark Matter Constraints from a SuperCDMS Single-Charge Sensitive Detector

“…[13], from which we also adopted the nominal photoelectric cross sections [27]. In order to project an absorption event of known energy into our measured signal space, we adopted an ionization PHYSICAL REVIEW LETTERS 121, 051301 (2018) 051301-4 production model that is consistent with experimental measurements [41][42][43] and has the following mean n eh :…”

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“…This assumption does not take into account impact ionization effects occurring at short wavelengths, which can lead to quantum efficiencies exceeding unity [42], [43]. Thus, assuming J ph = 45.9 mA/cm 2 might actually result in a slight underestimation of the actual maximum J sc for an infinitely thick Si solar cell.…”

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“…This maximum current density is associated with vanishing difference in chemical potential, accordingly also with vanishing radiative recombination of excess carriers, 28 and in the language of the j V -curve of the illuminated system is named short-circuit current density…”