2008
DOI: 10.1021/jp8004184
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The Nature of Defects in Fluorine-Doped TiO2

Abstract: Fluorine-doped titanium dioxide was prepared via sol−gel synthesis and subsequent calcination in air. The presence of fluorine in the lattice induces the formation of reduced Ti3+ centers that localize the extra electron needed for charge compensation and are observed by electron paramagnetic resonance. Density functional theory calculations using hybrid functionals are in full agreement with such description. The extra electron is highly localized in a 3d orbital of titanium and lies a few tenths of an electr… Show more

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Cited by 342 publications
(326 citation statements)
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“…This different behaviour can be ascribed to the presence, on the surface, of F -groups replacing the OH -groups. It has been reported in fact that the use of fluorine containing compound in the preparation of doped TiO 2 always leads not only to bulk doping but also to the simultaneous fluorination of the surface [3,21]. This fact is confirmed in the present case by XPS analysis (not reported for sake of brevity) showing the typical peaks of surface F -ions.…”
Section: Tga-ftir Characterizationsupporting
confidence: 82%
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“…This different behaviour can be ascribed to the presence, on the surface, of F -groups replacing the OH -groups. It has been reported in fact that the use of fluorine containing compound in the preparation of doped TiO 2 always leads not only to bulk doping but also to the simultaneous fluorination of the surface [3,21]. This fact is confirmed in the present case by XPS analysis (not reported for sake of brevity) showing the typical peaks of surface F -ions.…”
Section: Tga-ftir Characterizationsupporting
confidence: 82%
“…The presence of Ti 3+ in the solid is a direct consequence of the substitution of O by F in some lattice site of the structure. The extra electron introduced by F in the system is thus stabilized by Ti 4+ ions [3]. The solid can thus be written with regard to the fluorine modification, in the following chemical terms:…”
Section: Epr Characterizationmentioning
confidence: 99%
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“…This was done using a material doped with an aliovalent element bearing an extra electron (F and/or Nb). [31,32] The same convenient approach could not be extended to rutile since the extra electron carried by Nb, in Nb-doped rutile, is not transferred to Ti ions. [33,34] We tried also to obtain Fdoped rutile by high temperature treatments of doped anatase.…”
Section: Electron Trapping In -Rutilementioning
confidence: 99%
“…The most widely used approach for what has been called "band gap engineering" has been to dope TiO 2 with another species, which could be a metal cation on the Ti site [8][9][10][11][12][13] or C/N/P on the anion site [14][15][16][17] or co-doping at cation and anion sites [18][19][20]. A single dopant introduces new states into the energy gap, in principle leading to a reduction of the band gap of the host oxide; whether this occurs at the valence band or at the conduction band depends on the dopant.…”
Section: Introductionmentioning
confidence: 99%