The Multilayer Model of Implanted GaAs Ellipsometric Investigation

Abstract

Ellipsometric measurements of GaAs implanted with 100 and 180 keV Ar+ ions at doses in the range of 3 × 1013 to 1016 ions/cm2 are presented. The thicknesses of the amorphous GaAs layer and a transition layer as well as the distribution of the optical constants in the transition layer are calculated basing on the multilayer model.