Vapour Growth and Epitaxy 1975
DOI: 10.1016/b978-1-4831-9854-5.50011-2
|View full text |Cite
|
Sign up to set email alerts
|

THE MORPHOLOGY OF Zn3P2 SINGLE CRYSTALS GROWN FROM THE VAPOUR PHASE

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
3
0

Year Published

2010
2010
2019
2019

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(3 citation statements)
references
References 4 publications
0
3
0
Order By: Relevance
“…TSLs have been reported for various material systems including GaAs, GaP, , InP, InAs, ZnTe, ZnSe, ZnS, ZnO, SiC, , Zn 2 SnO 4 , and Zn 3 P 2 . , Tetragonal Zn 3 P 2 is a crystalline system with and has a pseudo-face-centered cubic symmetry (Figure S1 in the Supporting Information). , For instance, when a transformation matrix is used, the [100] and [101] directions in the tetragonal system correspond to the [110] and [111] directions in the pseudocubic system, respectively. Zn 3 P 2 has an indirect band gap of 1.315 eV, and also, it has a direct band gap of 1.49 eV at room temperature .…”
Section: Introductionmentioning
confidence: 99%
“…TSLs have been reported for various material systems including GaAs, GaP, , InP, InAs, ZnTe, ZnSe, ZnS, ZnO, SiC, , Zn 2 SnO 4 , and Zn 3 P 2 . , Tetragonal Zn 3 P 2 is a crystalline system with and has a pseudo-face-centered cubic symmetry (Figure S1 in the Supporting Information). , For instance, when a transformation matrix is used, the [100] and [101] directions in the tetragonal system correspond to the [110] and [111] directions in the pseudocubic system, respectively. Zn 3 P 2 has an indirect band gap of 1.315 eV, and also, it has a direct band gap of 1.49 eV at room temperature .…”
Section: Introductionmentioning
confidence: 99%
“…(15) Calculations predicted that a constant spacing between the rotational twins would induce a direct bandgap in normally indirect bandgap semiconductors, such as group IV (Si, Ge) and III-V (GaAs) materials. (31,32) Zn 3 P 2 NWs (including twinned NWs), nanobelts (NBs), and nanotubes were usually synthesized using vapor phase transport, and their electronic and optoelectronic properties were also indentified. In many semiconductor and noble metal NWs with a cubic structure (e.g., GaP, InP, InAs, GaAs, ZnS, ZnS, ZnTe, Si, SiC, B 4 C, Cr 2 O 3 , Zn 2 SnO 4 , Zn 2 TiO 4 , Ag, Au), (111) twin planes are commonly found.…”
Section: Introductionmentioning
confidence: 99%
“…31 Zn 3 P 2 belongs to a unique tetragonal system, whose lattice constant, c/a, ratio (1.414) leads to its having a pseudo face-centered cubic (fcc) symmetry. 32,33 Zn 3 P 2 NWs (including twinned NWs), nanobelts (NBs), and nanotubes were usually synthesized using vapor phase transport, and their electronic and optoelectronic properties were also indentified. 12c,34-36 The present work demonstrates that tetragonal Zn 3 P 2 NWs have virtually the same twinned superlattice structure as that of ZB InAs NWs.…”
mentioning
confidence: 99%