“…(15) Calculations predicted that a constant spacing between the rotational twins would induce a direct bandgap in normally indirect bandgap semiconductors, such as group IV (Si, Ge) and III-V (GaAs) materials. (31,32) Zn 3 P 2 NWs (including twinned NWs), nanobelts (NBs), and nanotubes were usually synthesized using vapor phase transport, and their electronic and optoelectronic properties were also indentified. In many semiconductor and noble metal NWs with a cubic structure (e.g., GaP, InP, InAs, GaAs, ZnS, ZnS, ZnTe, Si, SiC, B 4 C, Cr 2 O 3 , Zn 2 SnO 4 , Zn 2 TiO 4 , Ag, Au), (111) twin planes are commonly found.…”