The Monte Carlo Method for Semiconductor Device Simulation

Quantum and Coulomb Effects in Nano Devices

“…Also shown in this figure are the analytical model predictions given by Eqs. (32) and (33). The decrease of the threshold voltage fluctuations with increasing the width of the gate is due to the averaging effects, in agreement with the experimental findings by Horstmann et al [70].…”

“…For example, the mesh cannot be arbitrarily small, otherwise the Coulomb potential would be double-counted by the Poisson equation and the BTE. Since the long-range part of the Coulomb potential is responsible for the many-body effects, the mesh size has to be determined consistently with, say, the renormalized electron (kinetic) energy calculated from the many-body theory [33]. This is, of course, not an easy task, especially, for the case of small device structures.…”

Detectors of the Cryogenic Dark Matter Search: Charge Transport and Phonon Emission in Ge 〈100〉 Crystals at 40 mK

“…Carrier scattering is dominated by spontaneous phonon emission (or collision with zero-point fluctuations of the lattice), often called the "zero-point" regime. It is often considered in the literature [1][2][3][4] that germanium mobility data at T = 8 K is representative of zero-point behavior. Our operational temperature is two magnitudes lower than this value.…”

“…With our small drift fields, it has been an open question how representative the 8 K data are of our conditions. This Monte Carlo simulation follows closely that of [1,5]. Scattering probability rates, derived from Fermi's Golden Rule, are numerically computed beforehand and are implemented as a function of energy.…”

“…We report on the results of a Monte Carlo simulation based on the wealth of literature on carrier transport in semiconductors [1][2][3][4][5][6][7]. We are able to predict the emission of phonons by carriers (the Luke-Neganov effect), as well as the carrier energy and spatial distribution functions.…”