The modification of the characteristics of ZnO nanofibers by TCNQ doping content

Erdal, Mehmet Okan; Koyuncu, Mustafa; Doğan, Kemal; Öztürk, Teoman; Koçyiğit, Adem; Yıldırım, Murat

doi:10.1007/s10854-021-06199-5

Cited by 2 publications

(1 citation statement)

References 57 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…According to Rouger and Maréchal (2019), SBDs have demonstrated high breakdown voltages of 10 kV, a high electric field of 7.7 MV•cm−1, good switching properties, and elevated operating temperatures (>250 °C) [8]. Research on adding organics [9][10][11], metal oxides [12], and nanocrystal materials [13][14][15] have been conducted in an increasing number of studies to improve the electrical properties of diodes.…”

Section: Introductionmentioning

confidence: 99%

Determination of External Quantum Efficiency for Graphene-based Photodiode

2023

Proceeding Book of 2nd International Conference on Frontiers in Academic Research ICFAR 2023

View full text Add to dashboard Cite

In this study, we aimed to investigate the electrical properties of graphene-based photodiode coated by drop casting and spin coating methods. We have deposited graphene onto n-type Si wafers via drop casting and spin coating methods. Spin coating was performed at 1500 rpm for 40 seconds. Both devices were dealt with 100 °C temperature. Metallic contacts were formed by depositing 150 nm Al via physical vapor deposition. To investigate photodiode properties, FY7000 Solar Simulator was used for current-transient (I-t) measurements. Responsivity and external quantum efficiency (EQE) of both devices were obtained using Visible hard-coated bandpass filter kits with typically 10 nm FWHM supplied from Thorlabs GmbH (Germany). EQE and responsivity of drop casted device were found to be higher than spin coated one.

show abstract

Section: Introductionmentioning

confidence: 99%

Determination of External Quantum Efficiency for Graphene-based Photodiode

2023

Proceeding Book of 2nd International Conference on Frontiers in Academic Research ICFAR 2023

View full text Add to dashboard Cite

show abstract

Investigation of Optoelectronic Properties of Organic Semiconductor Tetracyaoquinodimethane Based Heterostructures

Avcı

Hussaini

Erdal

et al. 2021

Selçuk Üniversitesi Fen Fakültesi Fen Dergisi

Self Cite

View full text Add to dashboard Cite

Recently, interfacial layer such as metal oxide, insulator and polymer have been used by scientists between the metal and semiconductor to increase the stability of the metal-semiconductor heterojunctions. These materials have been varied according to their usage aims. In this study, graphene nanoribbons (GNR) and 7,7,8,8 Tetracyanoquinodimethane (TCNQ, C12H4N4) layer has been used as interfacial layer between the metal and semiconductor for photodiode applications. The TCNQ layer collects and extracts more electrons in the interface of the device and is used as electron acceptor material for organic solar cells. Herein, we fabricated Al/p-Si/Al, Al/p-Si/TCNQ/Al and Al/p-Si/TCNQ:GNR/Al heterojunctions by physical vapor deposition technique. I-V measurements has been employed under dark and various light illumination conditions to show dielectric properties of the fabricated heterojunctions. From current-voltage characteristics, we calculated the electronic parameters such as ideality factor, barrier heights, series resistances and rise times. It can be concluded from overall results that TCNQ and TCNQ:GNR layers had a major impact on quality and can be considered as quite proper materials for optoelectronic applications.

show abstract

The modification of the characteristics of ZnO nanofibers by TCNQ doping content

Cited by 2 publications

References 57 publications

Determination of External Quantum Efficiency for Graphene-based Photodiode

Determination of External Quantum Efficiency for Graphene-based Photodiode

Investigation of Optoelectronic Properties of Organic Semiconductor Tetracyaoquinodimethane Based Heterostructures

Contact Info

Product

Resources

About