The models of electron scattering at the GaAs/AlAs(001) interface

Abstract

593.293.011Simplified models for description of conduction-band electron scattering at the GaAs/AlAs(001) interface are discussed. The models correspond to two approximations taking into account abrupt and smooth changes in the potential at the interface. They are constructed on the basis of calculations by the pseudopotential method [1]. The first model using an abrupt-interface approximation is similar to the three-valley Ando model on the basis of calculations by the strong coupling method [2,3]. The second model describes the potential in the proximity of the interface using a fragment of the (GaAs) 2 ,(AlAs) 2 , superlattice equal to a half of the superlattice period. It is shown that the developed models adequately describe the results of the corresponding exact calculations. It is found that the difference between the smooth-and abrupt interface models becomes more prominent for the case of heterostructures with thin layers and for the states with detectable localization of electron density in the vicinity of interface.