The Modeling of the Radiation Enhanced Diffusion of Boron in Silicon

Abstract

A numerical solution of the problem of enhanced diffusion is obtained for Β in Sig irradiated at temperature 700 C by protons 50 keV, J= 6.8 μΑ/cm . The system of impurity ,defect and pair continuity equations are used. The constants of the kinetic reactions and diffusion coefficients are derived from experimental results. For 2 ca l cu l a tion it was used an implicit scheme At ) on non-uniform mesh.Impurity peaks formation due to up-hill boron diffusion was obtained in good agreement with the experimental results.