“…As it belongs to the liquid-solid reaction, the resulting TiN layer exhibits a continuous and uniform thickness. 23 Moreover, as the TiN layer generated As the reaction proceeds, the Si released from reactions (1) and ( 2) becomes saturated and reacts with Ti to form Ti 5 Si 3 , which precipitates from Cu-Ti-Si(l) and grows into regular crystals, as shown in reaction (3). As displayed in Figure 9C, two nucleation and growth mechanisms are found for Ti 5 Si 3 25,32,64 : heterogeneous nucleation with the TiN layer as the nucleation site, which then grows attached to the TiN layer; and homogeneous nucleation in Cu-Ti-Si(l), followed by sufficient growth and random moving in the brazing liquid.…”