1983
DOI: 10.1016/0040-6090(83)90276-6
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The microhardness, electrical conductivity and temperature coefficient of resistance of reactively sputtered TiCxOyNz films

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Cited by 10 publications
(4 citation statements)
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“…The N intensity increased gradually from the substrate towards to the film surface, while other elements, such as Ti and O, almost remained constant through the film depth. This agreed with the report on a trace of N contamination which originated from the sputtering atmosphere [13]. The higher N intensity was believed to be the effect of higher sputtering power applied for preparing Bc2 sample and the same for the Bc6.…”
Section: Microstructural and Optical Propertiessupporting
confidence: 92%
“…The N intensity increased gradually from the substrate towards to the film surface, while other elements, such as Ti and O, almost remained constant through the film depth. This agreed with the report on a trace of N contamination which originated from the sputtering atmosphere [13]. The higher N intensity was believed to be the effect of higher sputtering power applied for preparing Bc2 sample and the same for the Bc6.…”
Section: Microstructural and Optical Propertiessupporting
confidence: 92%
“…The N intensity increased gradually from the substrate towards to the film surface, while other elements, such as Ti and O, almost remained constant through the film depth. This agreed with the report on a trace of N contamination which originated from the sputtering atmosphere [18]. The higher N intensity was believed to be the effect of higher sputtering power applied for preparing Bc2 sample and the same for the Bc6.…”
Section: Micro Structural and Optical Propertiessupporting
confidence: 92%
“…Hence, the considerable decline in the hardness of the V as -TiO 2 film was caused by the incorporation of a small amount of N and C atoms into the TiO 2 lattice, as revealed by Fark et al [49]. We believe that the shift in the preferential orientation from the (1 0 1) to the (2 1 1) plane, revealed by the XRD patterns in Fig.…”
Section: Elastic Modulus and Nanohardnessmentioning
confidence: 84%
“…These suggested that Ti-C bond formed by substituting oxygen for carbon, while C-N bond and/or C-C bond free in graphitic nature were present in the TiO 2 lattices by codoping N and C atoms. In other words, a compound of TiO 2ÀxÀy N x C y was formed analogous to the TiC x O y N z films prepared by RF sputtering TiC target in an Ar-O 2 -N 2 atmosphere [49]. By adopting this method, the amount of C relative to Ti in the bulk TiO 2 was tremendously reduced from a reported value >16.2% [49] to 1.3%, while the N/C ratio of the C-N bond remained fairly low at about 0.22.…”
Section: Xps Measurementsmentioning
confidence: 99%