The Metal–Organic Chemical Vapor Deposition of Lanthanum Nickelate Electrodes for Use in Ferroelectric Devices

Abstract

Lanthanum nickelate layers have been deposited onto 100 mm diameter silicon/silicon dioxide and (0001) sapphire substrates by liquid-delivery metal±organic (MO) CVD using the precursors La(thd) 3 and Ni(thd) 2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) dissolved in tetrahydrofuran and heptane. The LaNiO 3 (LNO) was deposited at 630 C in an oxidizing atmosphere, and the as-grown layers were highly crystalline and highly (110)-oriented on Si/SiO 2 . Electrical resistivity studies were performed and showed a dependence on the La/Ni ratio, the substrate used, and the post-deposition annealing conditions. A minimum electrical resistivity value of 300 lX cm was measured for LNO deposited on (0001) sapphire and rapidly annealed at 750 C. The resistivity values of the LNO layers deposited onto silicon/silicon dioxide were higher, with a minimum value of 1 mX cm. The rapid annealing at 750 C resulted in cracking of some of the LNO layers deposited onto the silicon substrates. However, the layers that were nickel-rich withstood the annealing treatment better and showed little evidence of cracking.

Synthesis, crystal structures and thermal behavior of Ni(pda)(hfac)2 and Ni(pda)(thd)2 as potential MOCVD precursors (pda-1,3-diaminopropane, hfac-1,1,1,5,5,5-hexafluoro-2,4-pentanedionato(-), thd-2,2,6,6-tetrametyl-3,5-heptanedionato(-))

“…There are also nickel chelates with N, Necoordination, for example Ni(dmg) 2 (bis(2,3-butanedionedioximato)nickel(II), Ni(deg) 2 (bis(3,4-hexanedionedioximato)nickel(II)), Ni(dpg) 2 , bis(ethanedialdioximato)nickel(II)) [11,12]. The most known complexes with O, Oecoordination are nickel (II) b-diketonates: Ni(acac) 2 [13], Ni(thd) 2 [14] and Ni(hfac) 2 [15].…”

Rapid Fabrication of Chemical Solution-Deposited Lanthanum Nickelate Thin Films via Intense Pulsed-Light Process

“…In addition, the catalytic activity for oxygen reduction is as high as that of a platinum catalyst [17]. Therefore, LNO perovskites have been investigated as a functional oxide layer in various applications for superior chemical and electrical properties [18][19][20][21][22][23][24].…”

“…Perovskite oxide thin films can be synthesized by various thin film deposition methods and categorized into vacuum and non-vacuum processes. Vacuum deposition processes can be divided into physical vapor deposition (PVD) processes such as pulsed laser deposition (PLD) and sputtering and chemical vapor deposition (CVD) processes including atomic layer deposition (ALD) [24,25]. Despite their precise thickness and composition control capability, there are several issues for vacuum processes, such as relatively low productivity and high process cost.…”

Relationship Processing–Composition–Structure–Resistivity of LaNiO3 Thin Films Grown by Chemical Vapor Deposition Methods

“…LNO films have been deposited by several different physical and chemical deposition methods including a pulsed laser deposition (PLD) [9,10], metalorganic decomposition (MOD) [11], sputtering [12], metalorganic chemical vapor deposition (MOCVD), and atomic layer deposition (ALD) [13][14][15]. However, as Ni 3+ is not the most stable oxidation state of nickel, deposited films often contained a mixture of Ni 3+ and Ni 2+ ions, which then led to the formation of oxygen vacancies in the structure heavily impacting the conductivity of the layer [16].…”