The Metal-Dielectric Transition in Liquid Metals and Semiconductors at High Temperatures and Pressures in the Region of the Critical Point

Алексеев, В. А.; Ovcharenko, V. G.; Ryzhkov, Yu. F.

doi:10.1070/pu1976v019n12abeh005375

Cited by 2 publications

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“…With increasing temperature, the chain length becomes short [1,2], electrical conductivity increases [3] and the optical gap decreases [4]. It is known that further increase of temperature with application of pressure gives rise to the semiconductor-metal transition near the liquid-gas critical point (T c = 1615 • C, P c = 385 bar, ρ c = 1.85 g cm −3 [5]) [6][7][8][9][10][11]. NMR study [2] revealed that the chain molecule contains about ten atoms on average when the semiconductor-metal transition occurs.…”

Section: Introductionmentioning

confidence: 99%

Transient direct-current conductivity of liquid selenium: an indication of the photoinduced semiconductor-metal transition

Sakaguchi¹,

Tamura²

1999

J. Phys.: Condens. Matter

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The transient dc conductivity of liquid selenium after illumination with a pulsed laser has been investigated as a function of temperature over the range and as a function of the laser intensity over the range 2-20 mJ/pulse. For the measurements, a new type of cell, made of quartz, of the authors' design was developed. We found that the conductivity increased up to when the pulsed laser illuminated liquid selenium at with the intensity of 20 mJ/pulse, which suggests that a photoinduced semiconductor-metal transition occurs. We also observed three types of relaxation, depending on the laser intensity and the temperature. The existence of these relaxations may suggest that there are several types of photoinduced structure in liquid selenium. We discuss the observed photoinduced effects in terms of the photoinduced structural changes.

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Section: Introductionmentioning

confidence: 99%

Transient direct-current conductivity of liquid selenium: an indication of the photoinduced semiconductor-metal transition

Sakaguchi¹,

Tamura²

1999

J. Phys.: Condens. Matter

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Semiconductor–metal transition in liquid semiconductors

Алексеев¹,

Андреев²,

Sadovskiǐ³

1980

Sov. Phys. Usp.

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A boundary layer thermal flowmeter, having the flow sensor on the downstream side of the heater, is operated in a closed-loop form. The DC heat injection source is initially used for maintaining a temperature difference between the flow and reference sensors and the superimposed pulsed-heat injection source for maintaining this temperature difference constant with flow rate. It is shown that the flowmeter output frequency varies from zero upwards in this form of operation and the relationship between the output frequency sensitivity and the flow rate is considerably improved by choosing a very small flow as the least measurable rate. A description is given of a 3 in thermal flowmeter that can measure water flow rates from 50 to 1500 lb h-l and gives output frequency variations from 0 to 1150 Hz.

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The Metal-Dielectric Transition in Liquid Metals and Semiconductors at High Temperatures and Pressures in the Region of the Critical Point

Cited by 2 publications

References 0 publications

Transient direct-current conductivity of liquid selenium: an indication of the photoinduced semiconductor-metal transition

Transient direct-current conductivity of liquid selenium: an indication of the photoinduced semiconductor-metal transition

Semiconductor–metal transition in liquid semiconductors

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