The mechanism of ultrafast structural switching in superionic copper (I) sulphide nanocrystals

Miller, T. A.; Wittenberg, Joshua S.; Wen, Haidan; Connor, Stephen T.; Cui, Yi; Lindenberg, Aaron M.

doi:10.1038/ncomms2385

Cited by 74 publications

(74 citation statements)

References 44 publications

(50 reference statements)

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“…In this context, our work proposes the use of thin layers of sulphides deposited by an electrodeposition technique that allows the deposition of single atomic layers with an accurate control of the crystal structure. Chalcogenide nanomaterials, interesting candidates as new semiconducting nanomaterial due to their tunable band gap and their peculiar transport proprieties 1 , can be grown using several electrochemical methods 2–4 . Among them, the Electrochemical Atomic Layer Deposition (E-ALD) technique is able to build up monolayer-by-monolayer a film, under the bottom up scheme, by alternating the deposition of a monolayer of the metallic element with one of the nonmetallic element, in a cycle which can be repeated several times 5, 6 .…”

Section: Introductionmentioning

confidence: 99%

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Operando SXRD study of the structure and growth process of Cu2S ultra-thin films

Giaccherini

Cinotti

Guerri

et al. 2017

Sci Rep

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Electrochemical Atomic Layer Deposition (E-ALD) technique has demonstrated to be a suitable process for growing compound semiconductors, by alternating the under-potential deposition (UPD) of the metallic element with the UPD of the non-metallic element. The cycle can be repeated several times to build up films with sub-micrometric thickness. We show that it is possible to grow, by E-ALD, Cu2S ultra-thin films on Ag(111) with high structural quality. They show a well ordered layered crystal structure made on alternating pseudohexagonal layers in lower coordination. As reported in literature for minerals in the Cu-S compositional field, these are based on CuS3 triangular groups, with layers occupied by highly mobile Cu ions. This structural model is closely related to the one of the low chalcocite. The domain size of such films is more than 1000 Å in lateral size and extends with a high crystallinity in the vertical growth direction up to more than 10 nm. E-ALD process results in the growth of highly ordered and almost unstrained ultra-thin films. This growth can lead to the design of semiconductors with optimal transport proprieties by an appropriate doping of the intra metallic layer. The present study enables E-ALD as an efficient synthetic route for the growth of semiconducting heterostructures with tailored properties.

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Section: Introductionmentioning

confidence: 99%

“…Moreover, several structures in the Cu-S compositional field are characterized by a liquid-like ionic conductivity at mild condition. For instance, chalcocite at 100 °C is considered to be a superionic conductor 1 . Thus, these materials are particularly interesting as active material for solar energy conversion.…”

Section: Introductionmentioning

confidence: 99%

Operando SXRD study of the structure and growth process of Cu2S ultra-thin films

Giaccherini

Cinotti

Guerri

et al. 2017

Sci Rep

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“…Copper sulfides (Cu 2 − x S (0 ≤ x ≤ 1)), with different copper stoichiometric ratios, which are a series of compounds ranging from copper-rich Cu 2 S to copper deficient CuS, are considered to be superionic conductors [18]. As an important semiconductor, Cu 2 S is of high interest due to its unique electronic, thermodynamic, optical, and other physical and chemical properties.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Thermoelectric Properties of Copper Sulfides via Solution Phase Methods and Spark Plasma Sintering

Tang

Feng

2017

Crystals

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Large-scale Cu 2 S tetradecahedrons microcrystals and sheet-like Cu 2 S nanocrystals were synthesized by employing a hydrothermal synthesis (HS) method and wet chemistry method (WCM), respectively. The morphology of α-Cu 2 S powders prepared by the HS method is a tetradecahedron with the size of 1-7 µm. The morphology of β-Cu 2 S is a hexagonal sheet-like structure with a thickness of 5-20 nm. The results indicate that the morphologies and phase structures of Cu 2 S are highly dependent on the reaction temperature and time, even though the precursors are the exact same. The polycrystalline copper sulfides bulk materials were obtained by densifying the as-prepared powders using the spark plasma sintering (SPS) technique. The electrical and thermal transport properties of all bulk samples were measured from 323 K to 773 K. The pure Cu 2 S bulk samples sintered by using the powders prepared via HS reached the highest thermoelectric figure of merit (ZT) value of 0.38 at 573 K. The main phase of the bulk sample sintered by using the powder prepared via WCM changed from β-Cu 2 S to Cu 1.8 S after sintering due to the instability of β-Cu 2 S during the sintering process. The Cu 1.8 S bulk sample with a Cu 1.96 S impurity achieved the highest ZT value of 0.62 at 773 K.

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“…In turn, these mechanical properties and associated anisotropic response or shape changes are intrinsically linked to the functionality and stability of nanoscale optoelectronic and nanoelectromechanical devices. As such, a real-time probe sensitive to atomic length-scale rearrangements and nanoscale morphological changes is required to elucidate their dynamical and functional response in-situ [13][14][15] .…”

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confidence: 99%

Visualization of nanocrystal breathing modes at extreme strains

et al. 2015

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Nanoscale dimensions in materials lead to unique electronic and structural properties with applications ranging from site-specific drug delivery to anodes for lithium-ion batteries. These functional properties often involve large-amplitude strains and structural modifications, and thus require an understanding of the dynamics of these processes. Here we use femtosecond X-ray scattering techniques to visualize, in real time and with atomic-scale resolution, light-induced anisotropic strains in nanocrystal spheres and rods. Strains at the percent level are observed in CdS and CdSe samples, associated with a rapid expansion followed by contraction along the nanosphere or nanorod radial direction driven by a transient carrierinduced stress. These morphological changes occur simultaneously with the first steps in the melting transition on hundreds of femtosecond timescales. This work represents the first direct real-time probe of the dynamics of these large-amplitude strains and shape changes in few-nanometre-scale particles.

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The mechanism of ultrafast structural switching in superionic copper (I) sulphide nanocrystals

Cited by 74 publications

References 44 publications

Operando SXRD study of the structure and growth process of Cu2S ultra-thin films

Operando SXRD study of the structure and growth process of Cu2S ultra-thin films

Synthesis and Thermoelectric Properties of Copper Sulfides via Solution Phase Methods and Spark Plasma Sintering

Visualization of nanocrystal breathing modes at extreme strains

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