The magnetophonon effect

Nicholas, R.J.

doi:10.1016/0079-6727(85)90004-7

Cited by 93 publications

(25 citation statements)

References 176 publications

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“…0 , electrons are resonantly scattered by optical phonons, resulting in maxima of the magnetoconductivity. [1][2][3][4] The MPR condition of conventional semiconductors is, therefore, given by…”

Section: Resonance Conditionmentioning

confidence: 99%

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Magnetophonon Resonance in Monolayer Graphene

Mori

Ando

2011

J. Phys. Soc. Jpn.

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The conductivity describing magnetophonon resonances is calculated in monolayer graphene, with the Fermi level located near the Dirac point. Intervalley scattering due to zone-edge phonons gives dominant contribution to the conductivity compared to intravalley scattering due to zone-center optical phonons mainly because of lower frequency. Resonances are classified into three types, i.e., principal, symmetric, and asymmetric transitions. The magnetophonon oscillations due to the principal and symmetric transitions are periodic in inverse magnetic field, while those due to the asymmetric transitions are not precisely periodic. The amplitude of the oscillation is shown to be weakly dependent on magnetic field.

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Section: Resonance Conditionmentioning

confidence: 99%

“…[1][2][3][4] MPR provides detailed information on carrier effective mass and phonon frequency at higher temperatures, typically between liquid nitrogen and room temperature. Recently, ambipolar field-effect transistors of an atomically thin graphene were successfully fabricated.…”

Section: Introductionmentioning

confidence: 99%

Magnetophonon Resonance in Monolayer Graphene

Mori

Ando

2011

J. Phys. Soc. Jpn.

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“…It has been extensively studied in bulk [13,14,15] and 2-dimensional [16] semiconductor systems, where magnetophonon resonances (MPR) are observed as magnetoresistance oscillations caused by resonant scattering of electrons by optical phonons. The dominant electron-phonon coupling in all III-V systems is with the LO phonon due to the large electric polarisation associated with these modes.…”

Section: Introductionmentioning

confidence: 99%

Superlattice magnetophonon resonances in strongly coupledInAs∕GaSbsuperlattices

et al. 2007

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We report an experimental study of miniband magnetoconduction in semiconducting InAs/GaSb superlattices. For samples with miniband widths below the longitudinal optical phonon energy we identify a new superlattice magnetophonon resonance (SLMPR) caused by resonant scattering of electrons across the mini-Brillouin zone. This new resonant feature arises directly from the superlattice dispersion and total magnetic quantisation (energetic decoupling) of the superlattice Landau level minibands.Semiconductor superlattices (SL's) comprise alternating layers of two or more semiconductor materials, leading to the formation of continuous energy bands in the growth direction called minibands. The reduced Brillouin zone and energy band width of the SL allows measurements that probe parameter spaces which are inaccessible in bulk semiconductors. Total quantisation of the superlattice energy scheme can be achieved by the application of a large magnetic field which suppresses inter-Landau level miniband (LLMB) scattering and allows the realisation of a 'quasi' 1-dimensional or quantum box SL (QBSL) regime. This has led to strong interest in the SL magnetoresistance and transport characteristics [1, 2, 3, 4, 5]. The SL miniband structure can be engineered such that in the QBSL regime optical phonon scattering is limited [6,7] by using narrow minigap and miniband widths, leaving only weak acoustic-phonon processes to dissipate the electron energy. In this report we investigate magnetotransport properties of InAs/GaSb superlattices in the miniband transport regime. In a previous publication [5] we investigated hot-electron magnetophonon resonance caused by the LO phonon mediated hopping between Landau Wannier-Stark states at low temperatures. In this report we study longitudinal magnetophonon resonances caused by the resonant emission/absorption of longitudinal optical (LO) phonons in the miniband transport regime for a range of SL structures at high tempertures. Through a systematic study using different miniband widths we identify a new form of magnetophonon resonance which provides evidence for the energetic de-coupling of SL Landau level minibands leading to suppression of optical phonon scattering.

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“…Many studies have been made on these effects in two-dimensional electron gas ͑2DEG͒ systems. [1][2][3][4][5] However, less work has been done on the effects of a quasi-one-dimensional electron gas ͑Q1DEG͒. [6][7][8] Vasilopoulos et al 6 studied MPR effects in quantum wires assuming a parabolic confinement potential of frequency ⍀, based on the Kubo formula 9 and the quantum Boltzmann equation, 2 and their calculations revealed that the ordinary resonance condition L ϭ P c is modified to L ϭ P c , where P is an integer, L and c are the LO-phonon frequency and cyclotron frequency, respectively, and c is the renormalized cyclotron frequency given by c ϭ( c 2 ϩ⍀ 2 ) 1/2 .…”

Section: Introductionmentioning

confidence: 99%

Magnetophonon and electrophonon resonances in quantum wires

et al. 1997

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Based on the formalism developed previously ͓Phys. Rev. B 48, 9126 ͑1993͔͒, magnetophonon resonances and electrophonon resonances in quantum wires are investigated for various confinement potentials. The occupation of several electric subbands due to these confinement potentials leads to electrophonon resonances and a splitting and shift of magnetophonon resonance peak positions. The dependence of both resonance peak positions on the magnetic field, the thickness of the well, the confinement frequency, and the bias field is shown explicitly.

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The magnetophonon effect

Cited by 93 publications

References 176 publications

Magnetophonon Resonance in Monolayer Graphene

Magnetophonon Resonance in Monolayer Graphene

Superlattice magnetophonon resonances in strongly coupledInAs∕GaSbsuperlattices

Magnetophonon and electrophonon resonances in quantum wires

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