2009
DOI: 10.1016/j.jmmm.2008.12.031
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The magnetic susceptibility of hydrogen-doped partially crystalline (Zr76Ni24)1−xHx metallic glasses

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Cited by 2 publications
(4 citation statements)
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“…The best fit in this temperature range is (T)/ (290 K) = (0.9812 ± 0.0003) + (3.16 ± 0.07) × 10 −3 × T 1/2 − (1.05 ± 0.04) × 10 −4 × T. This T 1/2 contribution to electrical resistivity in the low-temperature range is ascribed to the increase of the screening parameter for the Coulomb interaction F associated with the enhancement of the spin fluctuations which is consistent with magnetic susceptibility results presented in Ref. [15]. In fact, when Zr is alloyed with Ni to form Zr 76 Ni 24 metallic glass, the outer electrons of the Zr atoms will hybridize with the 3d electrons of the Ni atoms.…”
Section: Resultssupporting
confidence: 91%
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“…The best fit in this temperature range is (T)/ (290 K) = (0.9812 ± 0.0003) + (3.16 ± 0.07) × 10 −3 × T 1/2 − (1.05 ± 0.04) × 10 −4 × T. This T 1/2 contribution to electrical resistivity in the low-temperature range is ascribed to the increase of the screening parameter for the Coulomb interaction F associated with the enhancement of the spin fluctuations which is consistent with magnetic susceptibility results presented in Ref. [15]. In fact, when Zr is alloyed with Ni to form Zr 76 Ni 24 metallic glass, the outer electrons of the Zr atoms will hybridize with the 3d electrons of the Ni atoms.…”
Section: Resultssupporting
confidence: 91%
“…In case of the sample with the hydrogen doping level x = 0.043, the electron-phonon contribution disappears and only the WL contribution to electrical resistivity exists so that the change in the temperature dependence of electrical resistivity from ∼T at low-temperatures to ∼T 1/2 at high temperatures is a consequence of the change in the temperature dependence of the i ∼ T −2 , at lower temperatures, to i ∼ T −1 at higher temperatures. For the hydrogen doped sample x = 0.054, the enhancement of the spin-fluctuations is revealed [15] and a combination of the WL contribution proportional to temperature, ∼T, and the electron-electron interaction contribution proportional to ∼T 1/2 , gives rise to a characteristic shape of the electrical resistivity with a maximum at about 120 K. In the high temperature range, for the same sample, the WL correction proportional to temperature, ∼T 1/2 yields a decrease of the electrical resistivity with increasing temperature due to i ∼ T −1 .…”
Section: Resultsmentioning
confidence: 89%
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