“…In case of the sample with the hydrogen doping level x = 0.043, the electron-phonon contribution disappears and only the WL contribution to electrical resistivity exists so that the change in the temperature dependence of electrical resistivity from ∼T at low-temperatures to ∼T 1/2 at high temperatures is a consequence of the change in the temperature dependence of the i ∼ T −2 , at lower temperatures, to i ∼ T −1 at higher temperatures. For the hydrogen doped sample x = 0.054, the enhancement of the spin-fluctuations is revealed [15] and a combination of the WL contribution proportional to temperature, ∼T, and the electron-electron interaction contribution proportional to ∼T 1/2 , gives rise to a characteristic shape of the electrical resistivity with a maximum at about 120 K. In the high temperature range, for the same sample, the WL correction proportional to temperature, ∼T 1/2 yields a decrease of the electrical resistivity with increasing temperature due to i ∼ T −1 .…”