The low temperature switching performance of thyristors and MOSFETs

Hudgins, J.L.; Menhart, S.; Portnoy, W.M.

doi:10.1109/pesc.1990.131219

Cited by 10 publications

(3 citation statements)

References 6 publications

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“…Below 80 C, the value of increases with decreasing temperature. Since SCR voltage drop is directly proportional to , the following conclusion is drawn for this device: voltage drop increases linearly with increasing temperature above 40 C, reaches its minimum value between 40 and 80 C, and increases with decreasing temperature below 80 C. The SCR voltage drop variance with temperature is supported in [17].…”

Section: Discussionmentioning

confidence: 70%

Thermal modeling and experimentation to determine maximum power capability of SCR's and thyristors

Walker

Weldon²

1999

IEEE Trans. Power Electron.

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This paper develops and explores a new thyristor thermal model that accounts for the temperature-dependent nature of the device material and construction. The model iteratively calculates temperature rise of a thyristor under arbitrary pulse conditions. The model is then correlated to an experiment that places a silicon-controlled rectifier (SCR) in a controlled test circuit at room and cryogenic temperatures. The knowledge gained from the thermal model and correlative experiment will allow the circuit designer to maximize thyristor capability in pulsed power applications. The increased power capability of operating a thyristor at cryogenic temperature is also examined.

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