2012
DOI: 10.1016/j.proeng.2012.03.037
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The Low Electrical Resistivity of the High-entropy Alloy Oxide Thin Films

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Cited by 29 publications
(11 citation statements)
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“…The resistivity of the thin films all decreased after annealing because of recrystallizing and eliminating of defects. We found this interesting phenomenon first in the TFCNO film; the resistivity of as-annealed TFCNO film was lower than that of the TiFeCoNi bulk alloy [1,2]. Therefore, we further designed the other alloys to study this phenomenon.…”
Section: Resultsmentioning
confidence: 92%
See 1 more Smart Citation
“…The resistivity of the thin films all decreased after annealing because of recrystallizing and eliminating of defects. We found this interesting phenomenon first in the TFCNO film; the resistivity of as-annealed TFCNO film was lower than that of the TiFeCoNi bulk alloy [1,2]. Therefore, we further designed the other alloys to study this phenomenon.…”
Section: Resultsmentioning
confidence: 92%
“…This study deals with the room-temperature resistivity of alloy oxide thin films. In our previous study on the highentropy alloy, TiFeCoNiO film had an extremely low resistivity (∼35 Ω-cm) at room temperature [1,2]. The value is almost close to that of metallic alloy, and it broke our concept that the alloy oxides had higher resistivity.…”
Section: Introductionmentioning
confidence: 81%
“…was between 10% and 50%. Tsau et al [102] deposited the amorphous Ti x FeCoNi, TiFeCoNiCu x , and Al x CrFeCoNiCu thin films by sputtering. After being oxidized during annealing, all the oxide films transformed to the FCC structure with very low electrical resistivity.…”
Section: Hea Nitride Oxide and Carbide Films And Coatingsmentioning
confidence: 99%
“…Compared with the HEA films, their oxide films present the different electrical performance. Tsau et al [102] found the low electrical resistivity of TiFe-CoNi, TiFeCoNiCu, and AlCrFeCoNiCu oxide thin films. Huang et al [101] deposited the oxide films of AlCoCrCu 0.5 NiFe by a RF-sputtering system.…”
Section: Physical Characteristicsmentioning
confidence: 99%
“…Some researchers have studied the electrophysical and magnetic properties of high-entropy oxide phases [3,5,6,13,16,17]. It was shown that Ti x FeCoNiO y films have extremely low-electrical resistance values [17]. Some authors [3] declared an exceptionally high value of the dielectric constant of materials formed by Mg, Co, Ni, Cu, Zn, Li, and Ga oxides.…”
Section: Introductionmentioning
confidence: 99%