The local-field correction factor beyond the Onsager–Böttcher approach: Mixing of states from the interaction with atoms in the surrounding medium

Souza, Adelmo S.; Cortes, G.K.R.; Lima, Heveson; Santos, M.A. Couto dos

doi:10.1016/j.jlumin.2021.118292

Cited by 2 publications

(2 citation statements)

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“…However, slow response speed was demonstrated, which is probably limited by the low charge carrier mobility of the 0D metal halides that is not conducive to photocurrent generation. In addition, FAPbI 3 SCs were used to realize the first γ-photon spectroscopic detection in 2016, which gave a corresponding energy resolution of 35% under 241 Am source (59.5 keV). 310 He et al 311 designed a Schottky-type MAPbI 3 device showing a better energy resolution of 12% under 241 Am (59.5 keV).…”

Section: Photodetectorsmentioning

confidence: 99%

“…The oscillating dipoles induced in the local structure led to additional ligand-field interactions around Ln 3+ and facilitated the mixing of opposite-parity states into the 4f wavefunction of Ln 3+ , thus partially breaking the parity-forbidden intra-configurational 4f transitions. 236,241,242 As a result, the oscillator strength of the electric dipole transition (f ed ) and correlated electric dipole radiative transition probability (A ed ) of intra-4f optical transitions were highly enhanced. The significantly increased downconversion luminescence of Er 3+ in the NIR-II spectral region (Figure 9G) enabled the interstitially H +doped NaMgF 3 :Yb/Er NCs to be applied in high-resolution NIR-II angiography.…”

Section: Interstitial Dopingmentioning

confidence: 99%

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Near‐infrared emitting metal halide materials: Luminescence design and applications

Liu,

Dang,

Zhang

et al. 2024

InfoMat

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Near‐infrared (NIR) luminescent metal halide (LMH) materials have attracted great attention in various optoelectronic applications due to their low‐temperature solution‐processable synthesis, abundant crystallographic/electronic structures, and unique optoelectronic properties. However, some challenges still remain in their luminescence design, performance improvement, and application assignments. This review systematically summarizes the development of NIR LMHs through classifying NIR luminescent origins into four major categories: band‐edge emission, self‐trapped exciton (STE) emission, ion emission, and defect‐related emission. The luminescence mechanisms of different types of NIR LMHs are discussed in detail by analyzing typical examples. Reasonable strategies for designing and optimizing luminescence/optoelectronic properties of NIR LMHs are summarized, including bandgap engineering, self‐trapping state engineering, chemical composition modification, energy transfer, and other auxiliary strategies such as improvement of synthesis scheme and post‐processing. Furthermore, application prospects based on the optoelectronic devices are revealed, including phosphor‐converted light‐emitting diodes (LEDs), electroluminescent LEDs, photodetectors, solar cells, and x‐ray scintillators, as well as demonstrations of some related practical applications. Finally, the existing challenges and future perspectives on the development of NIR LMH materials are critically proposed. This review aims to provide general understanding and guidance for the design of high‐performance NIR LMHs materials.image

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Section: Photodetectorsmentioning

confidence: 99%

Section: Interstitial Dopingmentioning

confidence: 99%

Near‐infrared emitting metal halide materials: Luminescence design and applications

Liu,

Dang,

Zhang

et al. 2024

InfoMat

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Proof of crystal-field-perturbation-enhanced luminescence of lanthanide-doped nanocrystals through interstitial H+ doping

Li,

Jiang,

Liu

et al. 2023

Nat Commun

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Crystal-field perturbation is theoretically the most direct and effective method of achieving highly efficient photoluminescence from trivalent lanthanide (Ln3+) ions through breaking the parity-forbidden nature of their 4f-transitions. However, exerting such crystal-field perturbation remains an arduous task even in well-developed Ln3+-doped luminescent nanocrystals (NCs). Herein, we report crystal-field perturbation through interstitial H+-doping in orthorhombic-phase NaMgF3:Ln3+ NCs and achieve a three-orders-of-magnitude emission amplification without a distinct lattice distortion. Mechanistic studies reveal that the interstitial H+ ions perturb the local charge density distribution, leading to anisotropic polarization of the F− ligand, which affects the highly symmetric Ln3+-substituted [MgF6]4− octahedral clusters. This effectively alleviates the parity-forbidden selective rule to enhance the 4f–4 f radiative transition rate of the Ln3+ emitter and is directly corroborated by the apparent shortening of the radiative recombination lifetime. The interstitially H+-doped NaMgF3:Yb/Er NCs are successfully used as bioimaging agents for real-time vascular imaging. These findings provide concrete evidence for crystal-field perturbation effects and promote the design of Ln3+-doped luminescent NCs with high brightness.

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The local-field correction factor beyond the Onsager–Böttcher approach: Mixing of states from the interaction with atoms in the surrounding medium

Cited by 2 publications

References 25 publications

Near‐infrared emitting metal halide materials: Luminescence design and applications

Near‐infrared emitting metal halide materials: Luminescence design and applications

Proof of crystal-field-perturbation-enhanced luminescence of lanthanide-doped nanocrystals through interstitial H+ doping

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