The Lithium-Drifted Silicon p-i-n Junction as an X-Ray and Gamma-Ray Dosimeter

Baily, Norman A.; Kramer, Gordon

doi:10.2307/3571697

Cited by 23 publications

(5 citation statements)

References 11 publications

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“…The electron-hole pairs created by the absorption of radiation in the silicon p-i-n junction are detected by measuring the change in the current of the diode operated with reverse bias. The change in the reverse current of the diode was shown by Baily and Kramer (1964) an 80 mm2 surface area was bucked out with a potentiometer. The drift in the reverse current due to thermal changes was minimized by thermally shielding the detector.…”

Section: Radiation Measurements 21 Exposurementioning

confidence: 99%

Portable radiation and light detector using a p-i-n silicon diode

Bloch

Worrilow

1969

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A portable survey instrument using a silicon p-i-n diode as thepdiation detector has been designed. It can be used to measure exposure rates in ths-renge 50 mR/hr to 10 R/min, or exposures between 1 mR and 10 R. The radiation waveform can be visualized by attaching an oscilloscope to the output of the instrument. The response per roentgen of the instrument shows a variation of 8% in the HVT range from 2 to 8 mm Al. When used as a detector of optical radiation in conjunction with a Wratten No. 102 filter, the spectral response closely matches the Stendard C.I.E. luminosity curve. The instrument can, therefore, also be used to measure the luminance of fluoroscopic screens to determine the conversion efficiency of conventional fluoroscopes as well as image intensified fluoroscopes.

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Section: Radiation Measurements 21 Exposurementioning

confidence: 99%

Portable radiation and light detector using a p-i-n silicon diode

Bloch

Worrilow

1969

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“…The past few years have witnessed increasing applicat'ions of semiconductor radiation detectors in the physical sciences, and in the biomedical field they have been used for xand y-ray dosimetry (Bailey and Kramer 1964, Jones 1963, Parker and Morley 1967 a-counting and a-spectrometry (Brownell 1961, Friedland, Katzenstein andZatzick 1965). Their development as pcounters has awaited improvements in their technology, although some work on this topic has been reported by Friedland et al (1965) and Hilbert (1965, 1966).…”

Section: Introductionmentioning

confidence: 99%

Beta-counting sensitivities of silicon surface barrier detectors

Morley¹,

Parker²

1967

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l study was made of the 8-counting properties of two detectors: a needle probe 3 mm diameter and 2 cm long, and a disc-shaped wafer detector 3 cm diameter and 5 mm thick. These were exposed to thick sources of 1311, *'Na, 32P, and 42K having approximately 47r geometry for the probe and ' x geometry for the wafer. The absorbed energy spectra are shown, together with the resulting integral count rate as a function of discriminator level, and the dependence of these quantities on the sensitive detector volume is considered. The maximum practical sensitivity of the probe detector to 3 2 P is 0.9 counts,'sec for a solution of specific activity IO-8 Ci m1 at 3iCc, with a background count rate of 0.3 counts/sec; this compares farourably with geiger counters and Li-drifted silicon detectors of similar dimensions.

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“…The operation of these semiconductors as radiation detectors has been extensively discussed (Taylor 1963). Their use as x-ray and y-ray dosemeters has been investigated by many workers (e.g., Baily andKramer 1964, Scharf andSparrow 1964). These detectors, however, are very expensive.…”

Section: Introductionmentioning

confidence: 99%