“…Ion-sensitive field-effect transistors (ISFETs) and relatives (EnFETs, BioFETs, etc.) are the canonical examples [6], but similar mechanisms operate in semiconducting nanowires [7], semiconducting carbon nanotubes [8], electrolyte-insulator-semiconductor structures [9][10][11][12], suspended gate thin film transistors [13], and light-addressable potentiometric sensors [14,15]. These field-effect sensors rely on the interaction of external charges with carriers in a nearby semiconductor and thus exhibit enhanced sensitivity at low ionic strength where counterion shielding is reduced; this is explained in a recent review [16] and evidenced by the low salt concentrations often used (e.g., [7,10]).…”