The investigation of reversible strain and polarization effect in (011)-La0.9Ba0.1MnO3 film using field effect configuration

Abstract

We have investigated the influence of the electric bias field on the magnetic and transport properties of (011)-oriented La 0.9 Ba 0.1 MnO 3 (LBMO) thin film epitaxially grown on (011)-0.7Pb(Mg 1/3 Nb 2/3 )O 3 -0.3PbTiO 3 (PMN-PT) single crystal substrate. It was found that strain and polarization effects induced by electric bias coexist in the whole temperature range and both of them can modulate the transport properties of (011)-LBMO on PMN-PT. The relative change of resistance DR/R exhibits peak values of À22% and À32% for bias fields of þ12 and À12 kV/cm, respectively, around metal-insulator transition temperature, T MI . However, the sign of DR/R shows polarity dependence at temperature far below T MI . Further careful analysis demonstrates that these two opposite behaviors can be ascribed to the different influence of strain and polarization effects on transport properties.

Piezo-strain induced non-volatile resistance states in (011)-La2/3Sr1/3MnO3/0.7Pb(Mg2/3Nb1/3)O3-0.3PbTiO3 epitaxial heterostructures

“…4(a) can be understood in terms of the intrinsic doubleexchange interaction, which is strongly influenced by the inplane strain. A positive strain increases the Mn-O bond length and decreases the itinerant electron hopping strength between the Mn 3þ and Mn 4þ sites, 22,[24][25][26] thereby enhancing the resistivity of the LSMO film. 25,26 The remnant strain and resistance states observed in our composite structures have important implications for nonvolatile memory applications.…”

Coaction and competition between the ferroelectric field effect and the strain effect in Pr0.5Ca0.5MnO3 film/0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 crystal heterostructures

“…The electric-field control of electronic and magnetic properties of complex oxide thin films epitaxially grown on ferroelectric (FE) single-crystal substrates has attracted much attention due to their rich physics and potential applications in multifunctional devices. [1][2][3][4][5][6][7][8][9] There are a number of reports on this topic for perovskite manganite film/FE crystal heterostructures, such as La 0.67 Sr 0.33 MnO 3 film/BaTiO 3 crystal 3 and La 1Àx A x MnO 3 (A ¼ Ca,Sr,Ba) film/(1Àx)Pb(Mg 1/3 Nb 2/3 )O 3 -xPbTiO 3 crystal [4][5][6][7][8][9] heterostructures. It is generally believed that the electric-field-controlled tunability of electronic and magnetic properties of manganite thin films is strain-induced for such heterostructures.…”

Influence of the dynamic lattice strain on the transport behavior of oxide heterojunctions

“…Taking this into account, one may conclude that the present result demonstrates the impact of the reduction in the tensile strain of LCMO on the IB of the junction. As discussed above and revealed by previous reports, [10][11][12] the further relaxation of the LCMO film (the reduction of the tensile strain) caused by the substrate strain due to the converse piezoelectric effect would cause an enhancement of the hole concentration in LCMO, resulting in a suppression of depletion layer. Such suppression of depletion layer would increase opportunities for electron tunneling across the depletion area and results in a reduction in the effective barrier height.…”

“…As well documented, the biaxial strain due to lattice mismatch between film and substrate plays a very important role in controlling the electrical transport and magnetic properties of manganite thin films because of the strong electron-lattice coupling. [7][8][9][10][11][12] Indeed, L€ u et al have found that the IB can be tuned by chemical stress (hole contents) for La 1Àx Ca x MnO 3 =SrTiO 3 :Nb junctions. 13 Moreover, the tensile stress in the manganite film, imposed by substrate, was also found to have an obvious impact on the height of the IB.…”

“…[9][10][11][12] We selected La 0.67 Ca 0.33 MnO 3 (LCMO,a LCMO,bulk ¼ 3.868 Å ) and 15% (and 10%) La-doped SrTiO 3 (La x Sr 1Àx TiO 3 (x ¼ 0.10, 0.15)) (LSTO,a LSTO,bulk ¼ 3.905 Å ) to compose a heterojunction. The former is a p-type degenerated semiconductor while the latter is n-type with different carrier concentration due to different doping level.…”