The investigation of properties of silicon nitride films obtained by RPECVD from hexamethyldisilazane

Файнер, Н. И.; Rumyantsev, Yu. M.; Косинова, М. Л.; Yurjev, G.S.; Maximovskii, E. A.; Kuznetsov, F. A.

doi:10.1016/s0169-4332(96)00825-2

Cited by 31 publications

(22 citation statements)

References 5 publications

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“…It may be noted that HMDS has been employed as a nitriding agent to prepare Ti and Si nitrides [14]. In a typical synthesis, 2 lmol of the Ga cupferron and 4 mL HMDS were taken in 7 mL of toluene (procedure A).…”

Section: Methodsmentioning

confidence: 99%

New Solvothermal Routes for GaN Nanocrystals

Sardar

Rao

2004

Advanced Materials

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nanotubes remain (Fig. 4d). The Al 2 O 3 nanotube marked by the dotted circle in Figure 4d corresponds to that shown in the TEM image of Figure 1c, and the Al 2 O 3 nanotubes marked by the dotted rectangle in Figure 4d correspond to those shown in the TEM images of Figures 3a±d.The characteristics of the ALD employed in this study for the fabrication of the ZnO/Al 2 O 3 core/shell nanofibers are a self-regulating process mechanism such as monolayer deposition, completely precise thickness control, no pinholes, and exceptional 100 % step coverage or conformal coating. [8±12] Owing to these characteristics of the ALD, the thickness of the Al 2 O 3 shells in the ZnO/Al 2 O 3 core/shell nanofibers are conformally uniform and may be precisely controlled by the number of reaction cycles. The Al 2 O 3 nanotubes obtained from the wet-etching of the ZnO core material in the ZnO/ Al 2 O 3 core/shell nanofibers have very smooth morphology and no cracks. Therefore, the thickness of the Al 2 O 3 nanotubes is conformally uniform and precisely controllable. This is one advantage our method has over other methods for the preparation of Al 2 O 3 nanotubes.[4±7] The controllable thickness of Al 2 O 3 dielectric nanotubes will be useful in the fabrication of future nanometer-sized cylindrical capacitors. In summary, an easy and convenient route to fabricate Al 2 O 3 nanotubes with conformally uniform thickness has been developed. ZnO/Al 2 O 3 core/shell nanofibers were prepared from the Al 2 O 3 deposition of ZnO nanowires (synthesized by a thermal evaporation procedure on a Si substrate) with ALD. Amorphous Al 2 O 3 nanotubes with uniform thickness may be fabricated by wet-etching of the ZnO core nanowires in the ZnO/Al 2 O 3 core/shell nanofibers in H 3 PO 4 solution at 25 C. Straight-line and wave-shaped Al 2 O 3 nanotubes with different inner diameters may be fabricated by our method, depending on the morphology of ZnO nanowires used as templates. Their thickness may be precisely controlled by the number of ALD reaction cycles. ExperimentalZnO nanowires were synthesized by a thermal evaporation procedure on Si(100) substrates using ZnO powder. The ZnO powder was ground for 20 h in a mechanical grinding (ball mill) system. Ballmilled ZnO powder was put in an alumina boat and loaded into the center of the furnace, where the temperature was maintained at 1380 C. Si substrates (5 mm 5 mm in size) were placed at the end of the outlet of the furnace at a temperature of 450 C, where the ZnO nanowires were synthesized. The ball-milled ZnO powder was heated at 1380 C for 3 h in Ar carrier gas with a flow rate of 500 sccm. A thick polycrystalline ZnO layer was first formed on the Si substrates from the thermal evaporation of the ball-milled ZnO powder, and ZnO nanowires were synthesized from the thick layer during the same thermal evaporation. A more detailed description of the synthesis of the thick ZnO layer and the ZnO nanowires was given in a previous paper [13].The ZnO nanowires were covered with Al 2 O 3 by atomic-layer depositi...

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Section: Methodsmentioning

confidence: 99%

New Solvothermal Routes for GaN Nanocrystals

Sardar

Rao

2004

Advanced Materials

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“…Unfortunately low quality films, i.e. with high hydrogen and organic carbon content, are generally obtained with organosilicons [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Silicon nitride and oxynitride films deposited from organosilicon plasmas: ToF–SIMS characterization with multivariate analysis

Piras

Mundo

Fracassi

et al. 2008

Surface and Coatings Technology

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“…[2][3][4] Of the various methods used for the fabrication of Si:C:N films, the CVD techniques using organosilicon single-source precursors appeared to be very effective. The Si:C:N films were formed by; thermal CVD from ethylcyclosilazane, [5] hot-wire CVD from hexamethyldisilazane, [6] direct plasma (DP)CVD from hexamethyldisilazane, [7][8][9][10][11] bis(trimethylsilyl)carbodiimide, [10][11][12] and bis(dimethylamino)dimethylsilane, [13] RPCVD from hexamethyldisilazane, [14][15][16][17] 1-dimethylsilyl-2,2-dimethylhydrazine, [18,19] dimethylbis(2,2-dimethylhydrazino)silane, [18,19] 1,1,3,3-tetramethyldisilazane, [20,21] tris(dimethylamino)silane, [22] and (dimethylamino)dimethylsilane. [23] Among these CVD techniques the latter, RPCVD (also termed indirect or downstream plasma CVD) was found to be particularly useful for the fabrication of defect-free and morphologically uniform Si:C:N thin-film materials.…”

Section: Introductionmentioning

confidence: 99%

Remote Hydrogen Microwave Plasma CVD of Silicon Carbonitride Films from a Tetramethyldisilazane Source. Part 1: Characterization of the Process and Structure of the Films

Wróbel

Blaszczyk-Lezak

2007

Chemical Vapor Deposition

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Silicon carbonitride (Si:C:N) films are produced by hydrogen remote microwave plasma (RP)CVD using a 1,1,3,3-tetramethyldisilazane precursor. The effect of the substrate temperature on the rate and yield of the hydrogen RPCVD process, chemical composition, chemical structure, and surface morphology of the resulting film are investigated. The Arrhenius plots of the substrate temperature dependencies of the mass-and thickness-based growth rate and growth yield of Si:C:N film imply that RPCVD is controlled by the adsorption of film-forming precursors onto the growth surface. The results of Auger electron spectroscopy (AES) and Fourier transform infrared (FTIR) examinations reveal that the increase in substrate temperature from 35°C to 400°C involves the elimination of organic groups from the film and the formation of a silicon carbonitride network structure with a predominant content of Si-C carbidic bonds. The atomic force microscopy (AFM) results show that the films are morphologically homogeneous materials of surface roughness varying in a narrow range of small values (0.9 -2.0 nm).

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The investigation of properties of silicon nitride films obtained by RPECVD from hexamethyldisilazane

Cited by 31 publications

References 5 publications

New Solvothermal Routes for GaN Nanocrystals

New Solvothermal Routes for GaN Nanocrystals

Silicon nitride and oxynitride films deposited from organosilicon plasmas: ToF–SIMS characterization with multivariate analysis

Remote Hydrogen Microwave Plasma CVD of Silicon Carbonitride Films from a Tetramethyldisilazane Source. Part 1: Characterization of the Process and Structure of the Films

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