2016
DOI: 10.1016/j.jallcom.2016.06.085
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The interdiffusion in copper-nickel alloys

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Cited by 35 publications
(14 citation statements)
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“…The line analysis clearly shows how, starting from the SiO2 fiber and moving horizontally from left to right, one can find only Cu, for about the first 30 microns, until the appearance of what has been identified as the KV area (about 5–10 microns wide); then there is a Cu–Ni alloy interdiffusion zone (about 35 microns wide) with a high concentration of Cu, excluding a few microns near the only-Ni zone, that is, at the right side of the image. Figure 6 also shows that KVs are located in the Cu layer, as already demonstrated in [22,23].…”
Section: Methodssupporting
confidence: 77%
“…The line analysis clearly shows how, starting from the SiO2 fiber and moving horizontally from left to right, one can find only Cu, for about the first 30 microns, until the appearance of what has been identified as the KV area (about 5–10 microns wide); then there is a Cu–Ni alloy interdiffusion zone (about 35 microns wide) with a high concentration of Cu, excluding a few microns near the only-Ni zone, that is, at the right side of the image. Figure 6 also shows that KVs are located in the Cu layer, as already demonstrated in [22,23].…”
Section: Methodssupporting
confidence: 77%
“…It is common that the diffusion coefficient is a function of concentration at a constant temperature. 40 According to previous report, 41 the increase of Al content resulted in the decrease of the average strength of Ti-Si and Ti-Al bonds in Ti 3 Al 1−x Si x C 2 solid solution. It implies that the diffusion of Si and Al became difficult due to stronger bonds of Ti-Si and Ti-Al with increasing Si content.…”
Section: Results Of B-m Methodsmentioning
confidence: 84%
“…As a rule, the voiding should be suppressed since it leads to failure of final parts, e.g., microelectronic circuits. [25,26] The voids are generated from the beginning of the diffusion process at the original interface between the a/ b interface, and during the diffusion process, they grow and move with the extremum of diffusion flux of the most mobile component toward the b-Ti side. The diffusion process in b-Ti can be observed; the measured element concentrations change with the measuring distance in b-Ti.…”
Section: A General Observationsmentioning
confidence: 99%
“…The relaxation of vacancy subsystem can proceed by the vacancies merging into voids. [23][24][25] Despite the fact that voiding does not occur during the diffusion process through a/b interfaces in two-phase titanium alloys, such phenomenon was observed and analyzed in the article for the diffusion pair of dissimilar alloys. Most articles on the diffusion process through interface concern the couples composed of different elements.…”
Section: Introductionmentioning
confidence: 99%
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