Proceedings Electronic Components and Technology, 2005. ECTC '05.
DOI: 10.1109/ectc.2005.1441299
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The integrated theory of whisker formation - a stress analysis

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Cited by 7 publications
(4 citation statements)
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“…There is significant work already defending this statement starting as early as the 1950s [32]. More recently, at ECTC 2005, Galyon et al [21] published an excellent overview of compressive stress at it relates to whisker growth and also presented a "to be published" detailed work evaluating and refuting claims of whisker growth without compressive stress. Fig.…”
Section: A Initial and Necessary Conditions For Whisker Growthmentioning
confidence: 95%
“…There is significant work already defending this statement starting as early as the 1950s [32]. More recently, at ECTC 2005, Galyon et al [21] published an excellent overview of compressive stress at it relates to whisker growth and also presented a "to be published" detailed work evaluating and refuting claims of whisker growth without compressive stress. Fig.…”
Section: A Initial and Necessary Conditions For Whisker Growthmentioning
confidence: 95%
“…They also proliferate greatly to form bands that support axon growth into and through distal nerve stumps. This support includes supplying numerous growth factors and extracellular matrix secretion [13,23,25,27,33]. Experimentally, SCs transplantation has been shown to enhance axon outgrowth both in vitro [51] and in vivo [7,32].…”
Section: Introductionmentioning
confidence: 99%
“…According to Laurila et al [46], the reaction rate of the Ni-Sn is relatively smaller than the Cu-Sn, thus resulting in a thinner IMC layer in the Ni-Sn. Other researchers also agreed that the reaction rate of Ni-Sn is slower compared to the reaction rate of the Cu-Sn [47,48]. Thus, the Ni layer acts effectively as a barrier layer for the immersion tin surface finish to prevent the formation of Cu-Sn intermetallics, which is believed to be the main factor for whiskers' formation and growth.…”
Section: Influence Of Inter-diffusionmentioning
confidence: 98%