The insulated gate rectifier (IGR): A new power switching device

Baliga, B. Jayant; Adler, M.S.; Gray, P.R.; Love, R.P.; Zommer, N.

doi:10.1109/iedm.1982.190269

Cited by 185 publications

(29 citation statements)

References 2 publications

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“…Power MOSFET's are an important class of silicon devices for low-voltage and high-frequency power conversion functions [5]. For high-voltage and high-power applications, Manuscript received October 10, 1988;revised April 18, 1989 conductivity modulated bipolar silicon devices such as insulated-gate bipolar transistors (IGBT's) [6], [7], MOScontrolled thyristors (MCT's) [8], [9] and depletion-mode thyristors (DMT's) [ 101 show considerable promise for improvement over conventional silicon power devices [5] such as field-controlled thyristors (FCT's), power junction field-effect transistors (JFET's), metal-semiconductor field-effect transistors (MESFET's) , and gate turn-off thyristors (GTO's) because of their superior power-handling capabilities, improved safe operating area (SOA), and high input impedance.…”

Section: Introduction Recent Years Significant Advances In Silicomentioning

confidence: 99%

Optimum semiconductors for high-power electronics

Shenai

Scott

Baliga

1989

IEEE Trans. Electron Devices

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592

192

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Elemental and compound semiconductors, including widebandgap semiconductors, are critically examined for high-power electronic applications in terms of on-state resistance, power loss caused by junction leakage, heat conduction, radiation hardness, high-frequency performance, and high-temperature operation. Based on a new analysis applicable to a wide range of semiconducting materials and by using the available measured physical parameters, it is shown that widebandgap semiconductors such as SIC and diamond could offer significant advantages compared to either silicon or group 111-V compound semiconductors for these applications. The new analysis uses peak electric field strength at avalanche breakdown as a critical material parameter for evaluating the quality of a semiconducting material for highpower electronics. Theoretical calculations show improvement by orders of magnitude in the on-resistance, twentyfold improvement in the maximum frequency of operation, and potential for successful operation at temperatures beyond 600°C for diamond high-power devices. New figures of merit for power-handling capability that emphasize electrical and thermal conductivities of the material are derived and are applied to various semiconducting materials. It is shown that improvement in power-handling capabilities of semiconductor devices by three orders of magnitude is feasible by replacing silicon with silicon carbide; improvement in power-handling capability by six orders of magnitude is projected for diamond-based devices.

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Section: Introduction Recent Years Significant Advances In Silicomentioning

confidence: 99%

Optimum semiconductors for high-power electronics

Shenai

Scott

Baliga

1989

IEEE Trans. Electron Devices

Self Cite

592

192

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“…In the late 1970s power MOSFETs became commercially available, and in 1985 the Insulated Gate Bipolar Transistor (IGBT) was commercially introduced by General Electric. The IGBT is basically a hybrid MOS-gated turn on/off bipolar transistor that combines the properties of MOSFET, BJT and the thyristor [81].…”

Section: A the Advent Of Power Electronics And Variable Speed Convermentioning

confidence: 99%

The Marine Vessel’s Electrical Power System: From its Birth to Present Day

et al. 2015

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Abstract-The evolution of the use of electricity in marine vessels is presented and discussed in this article in a historical perspective. The historical account starts with its first commercial use in the form of light bulbs in the SS Columbia in 1880 for illumination purposes, going through the use in hybrid propulsion systems with steam turbines and diesel engines and transitioning to our days with the first case of electric marine vessel entirely based on the use of batteries in 2015. Electricity use is discussed not only in the light of its many benefits but also of the challenges introduced after the emergence of the marine vessel electrical power system. The impact of new conversion technologies like power electronics, battery energy storage and the dc power system on the trajectory of this development is thoroughly discussed. The article guides the reader through the different stages of this development influenced by the different forms electricity took in the marine vessel, with emphasis on how electricity was used has impacted the marine vessel power system development.

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“…In the first place, the concept of the Insulated Gate Bipolar Transistor (IGBT) was derived from the power MOSFET in the 80s [11,12]. Owing to its bipolar conduction mechanism providing very low on-state voltage drop by means of excess base charge, the IGBT evolved from the 300 V to 600 V range to the 6.5 kV voltage level [13].…”

Section: Introductionmentioning

confidence: 99%

Conceptual Study of Sub-600 V IGBTs

Bauer

2015

IEEE Trans. Power Electron.

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Very low voltage, 60 to 600V IGBTs were compared to power MOSFETs with conventional and superjunction drift layers of identical voltage classes using mixed-mode numerical device simulation. This study was done in the light of forthcoming 4 0 0 V c l a s s I G B T s f o r u s e i n E V / H E V v e h i c l e s : t h e 6 0 0 V borderline, which previously separated the bulk of power MOSFET from IGBT applications, has become fragile recently. We find that the 400 V class must not represent a lower limit for IGBTs based on silicon: in fact, LV IGBTs could offer lower losses down to the 60 to 100 V level. Most importantly, low voltage IGBTs may outperform power MOSFETs not only with respect to onstate voltage drop but also regarding switching offering up to 30% lower turn-off losses. The paper presents physics based arguments focusing on the device transconductance to augment these projections. LV IGBTs or hybrid devices (monolithic integration o f M O S F E T p l u s I G B T ) c o u l d b e c o m e l o w e r c o s t , h i g h performance alternatives to SJ power MOSFETs thanks to short development cycles common in mature silicon technologies. Index Terms-Insulated Gate Bipolar Transistor (IGBT), power MOSFET, superjunction power MOSFET, technology trade-off, emitter efficiency.

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The insulated gate rectifier (IGR): A new power switching device

Cited by 185 publications

References 2 publications

Optimum semiconductors for high-power electronics

Optimum semiconductors for high-power electronics

The Marine Vessel’s Electrical Power System: From its Birth to Present Day

Conceptual Study of Sub-600 V IGBTs

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