Abstract:The insertion of single-wafer thermal and CVD technologies into the front- and back-end of the line processing starts with study of the integrated circuits manufacturing and device performance requirements. Relying upon the lessons learned and using the concurrent engineering approach, next generation processing equipment design architecture is then defined. In order to meet the process performance, throughput, and cost of ownership requirements of semiconductor IC manufacturing as defined in the SIA road map,… Show more
“…[2] The model is developed by assuming that temperature is independent of z and azimuth 0. With these assumptions the model can be expressed by --Ikr2') + q0,0(r) + q,,(r) = pC 2i [9] r ar ar)…”
A radiant heat-transfer model is verified for a susceptorless multizone rapid thermal chemical vapor deposition (RTCVIJ) system. Qualitative agreement is shown between thermal model predictions and temperature measurements as deduced via experimental film thickness measurements of polysilicon. The analysis is used to demonstrate that a wafer support mechanism overlapping the edge of the wafer in an RTCVD system contributes significantly to spatial nonuniforniities and nonsymmetries. The thermal model is also verified by demonstrating qualitative agreement between the lamp powers predicted by the model to be the optimal settings with those that were determined experimentally to be approximately the optimal settings. In addition, the applicability of the model is studied by examining the performance of a closed-loop temperature controUer designed using the model. The model-based controller is demonstrated to produce better repeatable film thicknesses than an open-loop method through comparative experimental studies of 24 consecutively processed wafers.
“…[2] The model is developed by assuming that temperature is independent of z and azimuth 0. With these assumptions the model can be expressed by --Ikr2') + q0,0(r) + q,,(r) = pC 2i [9] r ar ar)…”
A radiant heat-transfer model is verified for a susceptorless multizone rapid thermal chemical vapor deposition (RTCVIJ) system. Qualitative agreement is shown between thermal model predictions and temperature measurements as deduced via experimental film thickness measurements of polysilicon. The analysis is used to demonstrate that a wafer support mechanism overlapping the edge of the wafer in an RTCVD system contributes significantly to spatial nonuniforniities and nonsymmetries. The thermal model is also verified by demonstrating qualitative agreement between the lamp powers predicted by the model to be the optimal settings with those that were determined experimentally to be approximately the optimal settings. In addition, the applicability of the model is studied by examining the performance of a closed-loop temperature controUer designed using the model. The model-based controller is demonstrated to produce better repeatable film thicknesses than an open-loop method through comparative experimental studies of 24 consecutively processed wafers.
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