The influences of oxygen ion implantation on the structural and electrical properties of B-doped diamond films

Hu, Xiaojun; Ye, J.S.; Liu, H.J.; Hu, Hanjun; Chen, Xiaohu

doi:10.1016/j.diamond.2010.12.014

Cited by 12 publications

(7 citation statements)

References 15 publications

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“…In both samples resistance change rate was proportional to µ 2 B 2 at low field and coincidence with other result as reported in [5]. It indicates also that the defects produced by higher doses ion implantation give contributions to the conductivity in diamond film as reported in [10]. Such kind of phenomenon could explain by a localization of the wave function on B-atoms as reported by Willems et al [12].…”

Section: Magnetoresistance Propertiessupporting

confidence: 88%

SURFACE MODIFICATION OF CHEMICAL VAPOR DEPOSITION (CVD) DIAMOND FILM/SI(111) BY IMPLANTATION WITH Fe + B IONS IN CONJUNCTION WITH THEIR MAGNETIC PROPERTIES

Purwanto

Dimyati²,

Iskandar³

et al. 2017

gnd

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Surface Modification of Chemical Vapor Deposition (CVD) Diamond Film/Si(111) by Implantation with Fe+B ions In Conjunction with their Magnetic Properties. Surfcace modification of CVD manufactured diamond films on Si(111) substrate has been performed by means of Fe+B ion implantation followed by Argon ion gas sputtering with acceleration energy 20 keV and ion dose 1x1015 and 1x1016 ions cm-2. Scanning Transmission Electron Microscope (STEM) imaging shows the formation of amorphous carbon layer on top of the diamond film with thickness ca. 100 nm on the implanted sample and ca. 20 nm on the sample without implantion. The morphology and magnetic property of the films surface were characterized by Atomic and Magnetic Force Microscopy (AFM/MFM). The Electron Energy Loss Spectroscopy EELS analysis has revealed amount of Boron atoms distributed homogenously inside the carbon amorphous layer on both samples which is in close agreement to the result of Raman Spectroscopy showing the changes of the Raman spectrum due to implantation. The magnetic properties of the samples after Fe+B ion implantion were additionally investigated by means of Vibrating Sample Magnetometer (VSM). By increasing ion doses at constant energy 20 keV, the magnetoresistance property decreased from +45% on the sample implanted with dose 1x1015 to +8% on the sample implanted with dose 1x1016 ions cm-2.

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Section: Magnetoresistance Propertiessupporting

confidence: 88%

SURFACE MODIFICATION OF CHEMICAL VAPOR DEPOSITION (CVD) DIAMOND FILM/SI(111) BY IMPLANTATION WITH Fe + B IONS IN CONJUNCTION WITH THEIR MAGNETIC PROPERTIES

Purwanto

Dimyati²,

Iskandar³

et al. 2017

gnd

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“…The Magnetoresistance ratio and curve profile of the samples is clearly depending on the roughness of the film surface and the oxygen concentration at the interface, while it increases from +45% to +80% for B-E1D1 (Fe+B ions) and A-E3D1 (NiFe+B ions) samples respectively. Generally it is found higher oxygen content on the CVD diamond film contributes to conductivity as reported by Hu et al [17] . In this case, the oxygen concentration at the interface between diamond film and Si substrate causes higher the resistance value and gives lower magnetoresistance ratio as found in sample B-E1D1.…”

Section: Magnetoresistance Propertiessupporting

confidence: 52%

Scanning transmission electron microscopy (STEM) study on surface modified CVD diamond/Si(111) film post implanted Fe-B and NiFe-B related to GMR properties

Purwanto¹,

Iskandar

Dimyati

2016

AIP Conference Proceedings

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Synthesis and characterisation of composite based biohydroxyapatite bovine bone mandible waste (BHAp) doped with 10 wt % amorphous SiO 2 from rice husk by solid state reaction AIP Conference Proceedings 1725, 020009 (2016) (denoted as B-E1D1). Based on FPP measurement at room temperature (RT) and H applied =8 kOe , A-E3D1 sample has MR ratio almost 80% and MR ratio in B-E1D1 sample is 45%. Based on STEM-EDX investigation, there are two aspects of how MR ratio of A-E3D1 more higher than those of B-E1D1. Firstly, surface nanostructure on the top of A-E3D1 film is more grazing than on the top of B-E1D1. Analysis with Scanning Transmission Electron Microscope (STEM) equipped with Electron Energy Loss Spectroscopy (EELS) the growth of amorphous carbon layer on top of the implanted diamond film with thickness around 100 nm and only 20 nm on the no implanted sample have observed. Boron atoms were found inside the carbon amorphous layer distributed homogenously. Secondly, oxygen content at the interface between diamond film and silicon substrate in sample A-E3D1 was lower than those in B-E1D1 sample. This condition gives the resistance value in A-E3D1 lower than value in B-E1D1. This result is close to the Raman Spectroscopy data measurement which obviously suggests changes on the Raman spectrum due to implantation related to Oxygen excitation from B-E1D1 sample.

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“…This variation, also reported in refs. , is usually attributed to the increase of damage density in the diamond layer. After annealing, all the samples have a resistivity close to the graphite resistivity (around 250 Ω sq −1 ).…”

Section: Resultsmentioning

confidence: 99%

Characteristics of He Ion Implanted Layers on Single‐Crystal Diamond

Valentin

Feudis

Brinza

et al. 2018

Physica Status Solidi (a)

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Ohmic contact formation on lightly doped or intrinsic diamond is highly desirable particularly for detection application. Nevertheless, good quality of such contacts is difficult to obtain and the production of a thin graphitic layer underneath diamond surface can be an interesting approach. In this paper, intrinsic freestanding single‐crystal CVD samples are implanted with 10 keV He ions at different fluences. Simulations are performed to show that the used fluences are high enough to ensure the creation of an amorphous layer. The implanted layers are characterized before and after annealing by a combination of photoluminescence imaging, confocal microscopy, transmission electron microscopy (TEM), resistivity measurements, and Raman spectroscopy. After annealing, the layer resistivity and the layer density decrease. The values measured after annealing are close to the values measured on graphite. Raman spectroscopy results show that the implantation leads to the creation of a highly disordered graphite layer which quality improves after annealing to reach that of nanocrystalline graphite. It also shows that the use of light ions at relatively low energy makes possible the formation of this graphitic layer at the surface of the sample. These promising results pave the way for ohmic contact fabrication on lightly doped diamond.

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The influences of oxygen ion implantation on the structural and electrical properties of B-doped diamond films

Cited by 12 publications

References 15 publications

SURFACE MODIFICATION OF CHEMICAL VAPOR DEPOSITION (CVD) DIAMOND FILM/SI(111) BY IMPLANTATION WITH Fe + B IONS IN CONJUNCTION WITH THEIR MAGNETIC PROPERTIES

SURFACE MODIFICATION OF CHEMICAL VAPOR DEPOSITION (CVD) DIAMOND FILM/SI(111) BY IMPLANTATION WITH Fe + B IONS IN CONJUNCTION WITH THEIR MAGNETIC PROPERTIES

Scanning transmission electron microscopy (STEM) study on surface modified CVD diamond/Si(111) film post implanted Fe-B and NiFe-B related to GMR properties

Characteristics of He Ion Implanted Layers on Single‐Crystal Diamond

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