The Influence of Zn-Diffusion Depth on the Static and Dynamic Behavior of Zn-Diffusion High-Speed Vertical-Cavity Surface-Emitting Lasers at an 850 nm Wavelength

Shi, Jin‐Wei; Chen, C.-C.; Wu, Yelin; Guol, Shi Hao; Yang, Yao‐Joe

doi:10.1109/jqe.2009.2013125

Cited by 18 publications

(10 citation statements)

References 16 publications

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“…1 потерь и/или дополнительного оптического ограничения. Например, формирование оптической апертуры с высоким уровнем поглощения на свободных носителях с помощью технологии локальной диффузии цинка позволяет увеличить мощность одномодового излучения ВИЛ спектрального диапазона 850 nm с активной областью на основе квантовых ям GaAs и оксидной токовой апертурой, однако, несмотря на рост D-фактора, резонансная частота для таких приборов быстро насыщается с ростом тока из-за пространственного выжигания дырок в спектре усиления, что в итоге ограничивает частоту эффективной модуляции на уровне 12 GHz [78]. Создание оптической апертуры путем формирования пространственно-упорядоченного массива про-травленных отверстий в выводном зеркале ВИЛ спектрального диапазо-на 850 nm с активной областью на основе квантовых ям GaAs и токовой апертурой, полученной ионной имплантацией, позволяет реализовывать одномодовые лазеры с частотой модуляции более 18 GHz и скоростью безошибочной передачи данных 25 Gbit/s [79].…”

Section: управление модовым составом излученияunclassified

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Блохин¹,

Малеев²,

Бобров³

et al. 2018

Письма В Журнал Технической Физики

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The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called “vertical-cavity surface-emitting lasers”) under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ∼30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

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Section: управление модовым составом излученияunclassified

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Блохин¹,

Малеев²,

Бобров³

et al. 2018

Письма В Журнал Технической Физики

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“…The 6-μm Zn-diffusion aperture with a >1.5 μm diffusion depth will ensure stable singlemode output performance in 850-nm VCSELs [11], [19], [20]. During high-speed data transmission, the single-mode output might reduce the mode dispersion in the fiber and benefit the product of bit-rate transmission distance [23], [24].…”

Section: Device Structure and Fabricationmentioning

confidence: 99%

“…However, compared with the reported high-performance 850-nm VCSEL with a larger oxide aperture (∼6 μm), a significant degradation in the maximum 3-dB electrical-to-optical (E-O) bandwidth is observed (23 Gbit/s [2] versus ∼13 Gbit/s [3]). Such degradation in speed performance might be attributable to the tremendous increase in the differential resistance of a VCSEL (∼570 Ω [3]) with such a small oxide aperture (∼2 μm), the single-mode output-induced spatial hole burning effect [18]- [20], and the relaxation oscillation (RO) frequency-limited E-O bandwidth [19]- [21]. In addition, the significant stress of (double) oxide layers [1], [2], [8] on the active regions should be regarded as a more serious issue impacting the reliability of these VCSELs when their current-confined oxide apertures [22] are further downscaled.…”

Section: Introductionmentioning

confidence: 99%

“…The measurement results clearly indicate that the oxide-relief structure can effectively reduce the parasitic capacitance of the VCSEL. Details about the device modeling process for our VCSELs can be referred to our previous works [20]. Fig.…”

Section: Introductionmentioning

confidence: 99%

“…1(a) shows the Zn-diffusion structure with two different geometric sizes (devices A and B) realized in the top DBR of our oxide-relief VCSEL, which can further reduce the device resistance due to the disordering of the DBR structure after Zn-diffusion [11], [19]- [21]. Furthermore, we can also control the depth of Zn-diffusion to manipulate the number of optical modes inside our cavity [20], which has a significant influence on the transmission experiment as will be discussed later.…”

Section: Introductionmentioning

confidence: 99%

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Oxide-Relief and Zn-Diffusion 850-nm Vertical-Cavity Surface-Emitting Lasers With Extremely Low Energy-to-Data-Rate Ratios for 40 Gbit/s Operations

Shi

Yan

Wun

et al. 2013

IEEE J. Select. Topics Quantum Electron.

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We demonstrate novel structures of a vertical-cavity surface-emitting laser (VCSEL) for high-speed (∼40 Gbit/s) operation with ultralow power consumption performance. Downscaling the size of oxide aperture of VCSELs is one of the most effective ways to reduce the power consumption during high-speed operation. However, such miniaturized oxide apertures (∼2 μm diameter) in VCSELs will result in a large differential resistance, optical single-mode output, and a small maximum output power (< 1 mW). These characteristics seriously limit the maximum electrical-to-optical (E-O) bandwidth and device reliability. By the use of the oxide-relief and Zn-diffusion techniques in our demonstrated 850-nm VCSELs, we can not only release the burden imposed on downscaling the current-confined aperture for high speed with low-power consumption performance, but can also manipulate the number of optical modes inside the cavity to maximize the E-O bandwidth and product of bit-rate transmission distance in an OM4 fiber. State-of-the-art dynamic performances at both room temperature and 85 • C operations can be achieved by the use of our device. These include extremely high D-factors (∼13.5 GHz/mA 1 /2 ), as well as record-low energy-to-data ratios (EDR: 140 fJ/bit) at 34 Gbit/s operation, and error-free transmission over a 0.8-km OM4 multimode fiber with a record-low energyto-data distance ratio (EDDR: 175.5 fJ/bit.km) at 25 Gbit/s.

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Single‐Mode, High‐Brightness, and High‐Speed VCSEL Arrays

Khan

Shi

2021

Digital Encyclopedia of Applied Physics

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Optical sources such as high‐brightness and high‐speed vertical‐cavity surface‐emitting laser (VCSEL) arrays are preferred for a variety of applications such as, LiDAR, 3‐D sensing, and free‐space optical communication (FSC). However, further improvement in depth of resolution and ranging distance for these time‐of‐flight (ToF)‐driven systems can be accomplished by using VCSEL arrays having high brightness (large output power and narrow divergence angle) and faster response time. However, to increase the output power of these VCSEL arrays to watt level, several light emission apertures (several hundreds) need to be connected in parallel, which results in large parasitic capacitance. Hence, RC‐limited bandwidth becomes an influential aspect that restricts the speed of these high‐power VCSEL arrays. In this review article, we discuss recent progresses in high‐power VCSEL arrays and our own achievements in this field. By using tensile strain (induced by electroplated copper substrate) and Zn‐diffusion technique, we elaborate our previous work in which we successfully demonstrated a novel VCSEL array having high power (3 W), highly single mode (SM), high brightness (1 e−2divergence angle, ∼10°), and single‐polarized output performance without increasing threshold current (Ith) and intra‐cavity loss. Furthermore, thanks to the oxide‐relief process, which has tendency to decrease the parasitic capacitance that leads to rise time of demonstrated VCSEL array as short as around 100 ps. This number is around ten times shorter than that of commercially available VCSEL arrays with the same output power level (∼3 W) at the same wavelength (∼940 nm).

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The Influence of Zn-Diffusion Depth on the Static and Dynamic Behavior of Zn-Diffusion High-Speed Vertical-Cavity Surface-Emitting Lasers at an 850 nm Wavelength

Cited by 18 publications

References 16 publications

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Oxide-Relief and Zn-Diffusion 850-nm Vertical-Cavity Surface-Emitting Lasers With Extremely Low Energy-to-Data-Rate Ratios for 40 Gbit/s Operations

Single‐Mode, High‐Brightness, and High‐Speed VCSEL Arrays

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