Abstract:The influence of width of polysilicon mesa piezoresistors with dielectric insulation on their surface re sistivity and piezosensitivity is studied experimentally when forming the passivating layer of thermal silicon oxide. It is demonstrated that the surface resistivity strongly increases when decreasing the width of mesa-piezoresistors in the in terval of 3 � W � 10 Ilm. This fact concerns the decrease of the cross section and the impurity segregation during oxida tion. It is found out that decrease of the wi… Show more
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