The Influence of Weak Tin Doping on the Thermoelectric Properties of Zinc Antimonide

Shabaldin, A. A.; Prokof'eva, L. V.; Snyder, G. Jeffrey; Константинов, П. П.; Isachenko, G. N.; Asach, Aleksei V.

doi:10.1007/s11664-015-4266-7

Cited by 15 publications

(13 citation statements)

References 13 publications

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“…We predict the optimum carrier concentration for ZnSb to be 1.8 × 10 19 cm −3 by assuming electronic transport from a single parabolic band with effective mass m* = 0.6m e and electron scattering dominated by acoustic phonons [19] (Figure 7a). We find that the Sn-doped ZnSb sample prepared in phase space 4 achieves a near-optimum hole concentration, corresponding to high zT reports of Shabaldin et al [20] and Valset et al [7] Our results therefore suggest that the samples in those studies with successfully high carrier concentration were synthesized under equilibrium conditions similar to those set in phase space 4 of this study (Figure 7b). On the other hand, the lower zT observed by BÖttger et al, [5] which was a consequence of lower carrier concentrations, likely had equilibrium conditions similar to phase space 1.…”

Section: Discussionsupporting

confidence: 81%

Phase Boundary Mapping of Tin‐Doped ZnSb Reveals Thermodynamic Route to High Thermoelectric Efficiency

Wood

Toriyama

Dugar

et al. 2021

Advanced Energy Materials

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Section: Discussionsupporting

confidence: 81%

Phase Boundary Mapping of Tin‐Doped ZnSb Reveals Thermodynamic Route to High Thermoelectric Efficiency

Wood

Toriyama

Dugar

et al. 2021

Advanced Energy Materials

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“…The influence of more complicated defects can also be a large challenge. There are also reports on various temperature-cycling phenomena [52,96,97], involving the doping atoms and energy levels of these. Some of these effects may differ for different synthesis details.…”

Section: From Laboratory To Fabricationmentioning

confidence: 99%

Review of Research on the Thermoelectric Material ZnSb

Song¹,

Finstad²

2016

Thermoelectrics for Power Generation - A Look at Trends in the Technology

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The thermoelectric material ZnSb has been studied intensively in recent years and has shown promising features. The other zinc-antimonide compound, Zn 4 Sb 3 has remarkable low thermal conductivity, but it is accompanied with phase transitions at moderate temperature and has inherent stability problems. Compared to that, ZnSb is relatively phase stable and has a relative high charge carrier mobility and Seebeck coefficient, thus yielding a decent power factor. Meanwhile, its thermal conductivity can be reduced by means of nanostructuring, thus giving a good figure of merit at moderate temperatures, 400-600K. Many researchers have dedicated their efforts to study and improve ZnSb properties, and the figure of merit has been reported to be above one. Still, ZnSb as a thermoelectric material has features and behaviours that are not well-understood. The behaviour and properties of its intrinsic defects are not understood, but have interested researchers in recent years. This chapter intends to offer a comprehensive review on ZnSb to the readers. By combining own experiences from research on thermoelectric materials, the authors address the prospect for improving the thermoelectric properties of ZnSb and the concerns of transferring lab results to manufacturing.

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“…[ 11 ] Further, numerous doping studies were performed, involving e.g. Cu, Sn, In, which could also produce ZT values around 1 at 600 K. [ 12–14 ]…”

Section: Introductionmentioning

confidence: 99%

Transport Properties of Ag‐doped ZnSb

Eklöf

Fischer

Grîns

et al. 2020

Zeitschrift anorg allge chemie

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The intermetallic compound ZnSb is a (II‐V) narrow gap semiconductor with interesting thermoelectric properties. Electrical resistivity, Hall coefficient, thermopower and thermal conductivity were measured up to 400 K on Ag‐doped samples with concentrations 0.2, 0.5, 1, 2, and 3 at.%, which were consolidated to densities in excess of 99.5 % by spark plasma sintering. The work confirms a huge improvement of the thermoelectric Figure‐of‐merit, ZT, upon Ag doping. The optimum doping level is near 0.5 at.% Ag and results in ZT values around 1.05 at 390 K. The improvement stems from a largely decreased resistivity, which in turn relates to an increase of the hole charge carrier concentration by two orders of magnitude. It is argued that Ag can replace minute concentrations of Zn (on the order of 0.2 at.%) in the crystal structure which enhances the intrinsic impurity band of ZnSb. Excess Ag was found to segregate in grain boundaries. So the best performing material may be considered as a composite Zn~0.998Ag~0.002Sb/Ag~0.003.

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The Influence of Weak Tin Doping on the Thermoelectric Properties of Zinc Antimonide

Cited by 15 publications

References 13 publications

Phase Boundary Mapping of Tin‐Doped ZnSb Reveals Thermodynamic Route to High Thermoelectric Efficiency

Phase Boundary Mapping of Tin‐Doped ZnSb Reveals Thermodynamic Route to High Thermoelectric Efficiency

Review of Research on the Thermoelectric Material ZnSb

Transport Properties of Ag‐doped ZnSb

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