The Influence of Ultraviolet Irradiation on Polarization Fatigue in Ferroelectric Polymer Films

Fu, Shao; Yu, Hao; Luo, Xiao Ya; Yu, Jun; Zhu, Guang

doi:10.1109/led.2011.2172912

Cited by 8 publications

(9 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At present, there is considerable technological interest in ferroelectric thin film capacitors for their fascinating applications including high-density data storage with short read/erase/rewrite operation times. , However, a fundamental, long-standing issue in the commercialization of ferroelectric devices is polarization fatigue, i.e., a reduction in switchable polarization due to repetitive polarization switching by an electric field. − The polarization fatigue has been found to be dependent on several parameters including electrode material, doping, film thickness, temperature, and the amplitude, frequency, and polarity of the driving field. ,− Multiple microscopic models proposed for polarization fatigue attribute it to the growth of a nonswitching/dead layer nearby electrode, , redistribution of defects and mobile charge carriers arising from vacancies and impurities, − induced nucleation inhibition by charge injection, − or modification of the domain switching process due to wall pinning. ,− Following this, several techniques for refreshing the fatigue polarization have been proposed including annealing the sample above its curie temperature and irradiating it with UV light. ,− These approaches do, however, have major drawbacks of being implemented to on-chip-integrated ferroelectric thin films due to thermal budget and optical sensitivity constraints imposed by design complexity. The commonly discussed underlying mechanisms for the complete or partial recovery are the injection of electronic charge carriers, the diffusion of accumulated defect or oxygen vacancy, , or the depinning of the pinned domain walls. , …”

Section: Introductionmentioning

confidence: 99%

“…In recent years, many theoretical and experimental efforts have been devoted to understanding the electric field effects on electronic and ionic defects in oxide materials because of their fundamental importance in elucidating the emerging phenomena, device functionality, performance, and reliability-related issues. ,− Another approach to this end is to utilize the electric field to redistribute the electronic or ionic charges and, hence, to recover the fatigued polarization. ,, In addition, from the practical viewpoint and controllable means, electrically controlled fatigue–recovery definitely has a great advantage over annealing or UV-light illumination. Previous experimental findings have demonstrated the feasibility of this approach. , However, polarization switching kinetics in fatigued and recovered states, fatigue–recovery cycles repeatability and effectiveness, device resistance degradation, and performance issues with associated mechanisms are some of the open questions that still need to be addressed to realize the full potential of electrically controlled recovery of fatigued polarization.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electrically Controlled Reversible Polarization Fatigue–Recovery in Ferroelectric Thin Film Capacitors

Kale

Petraru

Kohlstedt

et al. 2022

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Spontaneous polarization switchable by the externally applied electric field in ferroelectrics is a crucial feature for its technological applications; however, the reduction in switchable polarization due to bipolar electric cycling primarily hampers its potential application in nonvolatile memory. Among others, electric-field-controlled polarization recovery would be highly desirable from fundamental and technological viewpoints. In spite of recent progress in electrically controlled polarization recovery, polarization reversal behavior in fatigued and recovered states, associated device resistance change, and repeatability and reproducibility of fatigue–recovery cycles remain poorly understood. This study provides an in-depth insight into the recovery of fatigued polarization by an electric field for epitaxially grown Pb(Zr0.3Ti0.7)O3 thin film capacitor with oxide electrodes. Systematic analysis of time- and field-dependent polarization switching kinetics in pristine, fatigued, and recovered states using a suitable statistical model enabled the precise extraction of microscopic switching parameters such as mean characteristic switching times and effective activation fields. Our results demonstrate that fatigue and recovery are possibly mediated by domain pinning–depinning because of defect redistribution and trapping–detrapping of charges at nonelectroneutral domain walls. In addition, the consecutive fatigue–recovery cycles elucidate the repeatability and applicability of electric field controlled polarization recovery in ferroelectric capacitors.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrically Controlled Reversible Polarization Fatigue–Recovery in Ferroelectric Thin Film Capacitors

Kale

Petraru

Kohlstedt

et al. 2022

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

“…Recently, intensive experimental research work has been carried out to investigate the radiation effects on ferroelectric thin films and ferroelectric-based devices [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27]. Good application potential of ferroelectrics in highly reliable and radiation-hardened memories was reported in these studies.…”

Section: Introductionmentioning

confidence: 99%

Ionizing radiation effect on metal–ferroelectric–insulator–semiconductor memory capacitors

Yan¹,

Li²,

Zhao³

et al. 2015

Semicond. Sci. Technol.

View full text Add to dashboard Cite

A theoretical model was developed to investigate the ionizing radiation effect on the electrical characteristics of metal-ferroelectric-insulator-semiconductor (MFIS) structure capacitors under exposure to radiation and under post-irradiation conditions. In this model, the radiation-induced degradation in the ferroelectric layer, oxide layer and silicon dioxide interface were considered, and the radiation effect of the silicon substrate was also taken into account to accommodate the dose rate effect. The modeling results showed that both the capacitance versus applied voltage (C-V) curves and the surface potential versus applied voltage (Φ S(Si) -V) curves shifted significantly and the memory window became worse with increasing total dose. Moreover, the derived results indicated that the symmetry of the polarization versus applied voltage (P-V) curves degraded with the increase in total dose, which may explain the phenomena of radiationinduced fatigue and imprint. These results can provide some insights into the estimation of the radiation-induced degradation of MFIS structure devices and may be integrated into electronic design automation (EDA) software for ionizing radiation effect simulation.

show abstract

“…[1][2][3][4] Recently, intensive experimental research works have been carried out to investigate radiation effects on ferroelectric thin films and ferroelectric-based devices. [5][6][7][8][9][10][11] Good application potentials of ferroelectrics in highly reliable and radiation-hardened memories were reported in these works. Although the remanent polarization was found much more robust than the floating gate stored charge, 11) radiation-induced degradations (e.g., polarization loss, fatigue, and imprint) in ferroelectric thin films were still observed.…”

mentioning

confidence: 84%

Modeling and simulation of ionizing radiation effect on ferroelectric field-effect transistor

Yan¹,

Li²,

Guo³

et al. 2016

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

A theoretical model is developed to investigate the ionizing radiation effect on electrical characteristics of a metal–ferroelectric–insulator–semiconductor structure ferroelectric gate field-effect transistor (MFIS FeFET). Modeling results show that gate capacitance versus gate voltage curves and transfer characteristic curves shift significantly and the memory window becomes worse with the total dose. Moreover, the drain current and I ON/I OFF ratio exhibit a considerable decrease under high incident dose rates. Finally, it is found that radiation-induced degradations can be affected strongly by the insulator layer thickness, and that MFIS FeFETs with a thin insulator buffer layer show a high radiation tolerance.

show abstract

The Influence of Ultraviolet Irradiation on Polarization Fatigue in Ferroelectric Polymer Films

Cited by 8 publications

References 11 publications

Electrically Controlled Reversible Polarization Fatigue–Recovery in Ferroelectric Thin Film Capacitors

Electrically Controlled Reversible Polarization Fatigue–Recovery in Ferroelectric Thin Film Capacitors

Ionizing radiation effect on metal–ferroelectric–insulator–semiconductor memory capacitors

Modeling and simulation of ionizing radiation effect on ferroelectric field-effect transistor

Contact Info

Product

Resources

About