“…At present, there is considerable technological interest in ferroelectric thin film capacitors for their fascinating applications including high-density data storage with short read/erase/rewrite operation times. , However, a fundamental, long-standing issue in the commercialization of ferroelectric devices is polarization fatigue, i.e., a reduction in switchable polarization due to repetitive polarization switching by an electric field. − The polarization fatigue has been found to be dependent on several parameters including electrode material, doping, film thickness, temperature, and the amplitude, frequency, and polarity of the driving field. ,− Multiple microscopic models proposed for polarization fatigue attribute it to the growth of a nonswitching/dead layer nearby electrode, , redistribution of defects and mobile charge carriers arising from vacancies and impurities, − induced nucleation inhibition by charge injection, − or modification of the domain switching process due to wall pinning. ,− Following this, several techniques for refreshing the fatigue polarization have been proposed including annealing the sample above its curie temperature and irradiating it with UV light. ,− These approaches do, however, have major drawbacks of being implemented to on-chip-integrated ferroelectric thin films due to thermal budget and optical sensitivity constraints imposed by design complexity. The commonly discussed underlying mechanisms for the complete or partial recovery are the injection of electronic charge carriers, the diffusion of accumulated defect or oxygen vacancy, , or the depinning of the pinned domain walls. , …”