The influence of trimethylindium impurities on the performance of InAlGaAs single quantum well lasers

Roberts, J.S.; David, J.P.R.; Smith, Lesley M.; Tihanyi, P.

doi:10.1016/s0022-0248(98)00665-4

Cited by 30 publications

(13 citation statements)

References 9 publications

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“…Any volatile oxygen impurities in the sources would reduce the device lifetimes by increasing the threshold and operating currents under high power conditions. The other precursors used in the MOVPE process were purified by a combination of physical and chemical techniques 6,8 to ensure low residual oxygen background levels, to be confident that the oxygen levels measured could be attributed to the TMI sources. All growth parameters were also kept as constant as possible.…”

Section: Laser Resultsmentioning

confidence: 99%

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Properties of solution TMI as an OMVPE source

Ravetz

Smith

Rushworth

et al. 2000

Journal of Elec Materi

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Section: Laser Resultsmentioning

confidence: 99%

“…6 This forms an adduct with the TMI, which is slightly more volatile than the TMI itself. 7 This adduct initially purges out when such a TMI bubbler is used on an MOVPE growth kit.…”

Section: Low Oxygen Applicationsmentioning

confidence: 99%

Properties of solution TMI as an OMVPE source

Ravetz

Smith

Rushworth

et al. 2000

Journal of Elec Materi

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“…However, the high reactivity of aluminum compounds to oxygen leads to bulk degradation, which becomes aggravated as the wavelength becomes shorter (i.e., higher aluminum concentration) [1], [3]. The use of an Al-free InGaAsP active region Publisher Item Identifier S 1041-1135(00)04617-6. avoids the bulk degradation associated with a large incorporation of oxygen impurities found in AlGaAs-active devices [1], [3]. In addition, the presence of indium in the active region is beneficial in that it inhibits the propagation of dark-line defects [4].…”

mentioning

confidence: 99%

Low-temperature sensitive, compressively strained InGaAsP active (/spl lambda/=0.78-0.85 μm) region diode lasers

Tansu

Zhou

Mawst

2000

IEEE Photon. Technol. Lett.

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“…Such strained AlGaInAs QWs are used together with AlGaAs waveguides predominantly for the important 808 nm wavelength [91,96] (pumping of Nd:YAG). The presence of indium in the active region is thought to increase resistance to dark-line defect propagation [60]. By increasing the Al content, this material system has also been used for shorter wavelengths down to 730 nm [97].…”

Section: Device Resultsmentioning

confidence: 99%

“…The AlGaAs, material quality obtained in both growth methods allows for the growth of diode-laser structures with excellent device performance even with high Al-containing waveguide and cladding layers. Addition of Al into the active region causes a degradation of the device performance due to the introduction of centers for nonradiative recombination [59,60]. In limiting the wavelength range accessible with AlGa(In)As-active regions, this constraint is more severe than the fact that AlGaAs is an indirect semiconductor for an Al content above x = 0.43.…”

Section: Puritymentioning

confidence: 99%

Epitaxy of High-Power Diode Laser Structures

Weyers

Bhattacharya

Bugge

et al.

Topics in Applied Physics

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Abstract. Excellent semiconductor-material quality is an essential prerequisite for the fabrication of high-power diode lasers and laser bars. This review discusses issues in the epitaxial growth of semiconductor materials and layer sequences that form the basis for diode lasers. First, an overview of the material systems used for diode lasers with emission wavelengths extending from the far-infrared to the blue range of the spectrum is presented. The following sections then concentrate on materials that have, until now, been used for high-power diode lasers: the GaAs-based, and to a lesser extent also the InP-based members of the III-V family (Al, Ga, In)(As, P). Different growth techniques are described, with stress on the two modern methods -Molecular-Beam Epitaxy (MBE) and Metalorganic Vapor-Phase Epitaxy (MOVPE) -that are currently used for the growth of diode-laser structures. An attempt is made to compare the relative strengths and weaknesses of these epitaxial growth techniques.The issues of purity, ordering (observed for example in GaInP), phase separation (occurring for certain compositions of GaInAsP) and p-and n-type doping for the constituent III-V materials found in high-power diode lasers are discussed in detail. The sequential growth of layers of controlled thicknesses, composition and doping profiles to build up the desired heterostructures requires careful optimization of the growth processes, especially at the heterointerfaces. While most of the layers within the heterostructure are lattice-matched to the underlying substrate, the active, light-emitting layer usually consists of one or more strained quantum wells (QWs). The advantages of such strained layers along with the corresponding implications from the growth viewpoint are highlighted. Finally, an overview of the different material combinations used and the state-of-the-art for 600-1060 nm emitting GaAs-based diode lasers is presented.The first reports on semiconductor-diode lasers [1] date back to 1962. Since then these devices have been realized over a wide range of emission wavelengths in a variety of material systems. Since the first demonstration of the semiconductor laser, threshold-current densities have fallen by more than three orders of magnitude, due to various breakthroughs made possible primarily by advancements in crystal-growth technologies. Improvements in Liquid-Phase Epitaxy (LPE) in the early 1970s enabled the realization of the Double Heterostructure (DH) concept and Continuous-Wave (CW) operation of GaAs/AlGaAs lasers, while progress in growth technologies like MolecularBeam Epitaxy (MBE) and Metalorganic Vapor-Phase Epitaxy (MOVPE) were responsible for the development of quantum-well lasers, which are the basis of most high-power diode lasers today. This review describes and compares the different epitaxial growth methods used to fabricate diode lasers in various material systems and examines important growth-related issues such as doping, ordering and homogeneity that are essential for the successful fabrication of ...

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The influence of trimethylindium impurities on the performance of InAlGaAs single quantum well lasers

Cited by 30 publications

References 9 publications

Properties of solution TMI as an OMVPE source

Properties of solution TMI as an OMVPE source

Low-temperature sensitive, compressively strained InGaAsP active (/spl lambda/=0.78-0.85 μm) region diode lasers

Epitaxy of High-Power Diode Laser Structures

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