1999
DOI: 10.1016/s0304-8853(98)00880-4
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The influence of Ti on the itinerant magnetism of RTX compounds

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Cited by 17 publications
(10 citation statements)
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“…Such substitutions have not been explored in pseudo-ternary RT X materials that adopt CeScSi-and CeFeSi-types as parent structures. To date, the effect of Mn substitutions in GdTiGe (CeScSi-type), GdTi 1−x Mn x Ge, and in GdTiSi (CeFeSi-type), GdTi 1−x Mn x Si, has been reported [14,15]. But in the former case the parent GdM-nGe is orthorhombic and its crystal structure is not directly related to that of GdTiGe, while in the latter the phase boundaries remain unclear.…”
Section: Introductionmentioning
confidence: 99%
“…Such substitutions have not been explored in pseudo-ternary RT X materials that adopt CeScSi-and CeFeSi-types as parent structures. To date, the effect of Mn substitutions in GdTiGe (CeScSi-type), GdTi 1−x Mn x Ge, and in GdTiSi (CeFeSi-type), GdTi 1−x Mn x Si, has been reported [14,15]. But in the former case the parent GdM-nGe is orthorhombic and its crystal structure is not directly related to that of GdTiGe, while in the latter the phase boundaries remain unclear.…”
Section: Introductionmentioning
confidence: 99%
“…In CeFeSi-type structure, atoms can be arranged in the sequence R-X-T2-X-R, which shows that R atom in such type of structure is separated by X and T atoms. Thus the hybridization between p and d states of X and T elements, respectively, try to fill 3d up and 3d down sub-bands [152]. In the study of CeFeSi-type structure, the authors have considered three R-R exchange interactions, these interactions are: J0 within the R planes, J1 between R planes separated by T and X planes (BaAl4 block) and J2 between nearest R planes (W block) [8].…”
Section: Rtix Compoundsmentioning
confidence: 99%
“…It is very surprising that though Ti and Si are non-magnetic, the ordering temperature is very high. To understand this behavior Nikitin et al [152] substituted Ti in place of Mn in GdMnSi compound. It has been observed that substitution of Ti at Mn place, increases the TC and the paramagnetic Curie temperature (θp) of the compounds.…”
Section: Rtix Compoundsmentioning
confidence: 99%
“…From the measurements of the magnetization of the GdMnSi single crystal and calculations of its magnetic structure at low temperatures, we have succeeded to define a hierarchy of exchange interactions in this compound. It turned out that in GdMnSi the strong interactions within Mn and Gd sublattices coexist with the weak intersublattice interaction Gd-Mn [3]. A similar situation can be expected for isostructural compounds RMnX with other R and X atoms [4,5].…”
Section: Introductionmentioning
confidence: 66%
“…A negative interaction between Nd atoms located in the planes separated by the Mn and Ge layers occurs at low temperatures [4]. An analysis of the magnetic data for isostructural compounds RMnX [3,4] shows that in compounds with small R-R distances the antiferromagnetic coupling between the R layers occurs, whereas the increase in these distances leads to the ferromagnetic coupling. Probably, the lattice parameters of the NdMnGe compound are near the critical distance, as a result temperature decreasing leads to a decrease in the cell volume and the negative exchange interactions increase.…”
Section: Discussionmentioning
confidence: 97%