The influence of thickness and ammonia flow rate on the properties of AlN layers

Çörekçí, S.; Öztürk, Mustafa Kemal; Çakmak, M.; Özçelik, Süleyman; Özbay, Ekmel

doi:10.1016/j.mssp.2011.06.003

Cited by 21 publications

(2 citation statements)

References 19 publications

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“…Holger Fiedler et al [14] investigated the effect of long-term stability on the interface between AlN films and silicon for microwave frequency electronic devices [14]. The effect of substrate temperature, ammonia (NH 3 ), flow rate, and layer thickness on the characteristics of AlN layers was reported [15,16]. In the literature, most investigators concentrate on the optimization of the growth parameters.…”

Section: Introductionmentioning

confidence: 99%

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

et al. 2021

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This paper reports the effect of Silicon substrate orientation and Aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by a DC magnetron sputtering technique at low temperatures. The structural analysis has revealed a strong (0001) fiber texture for both Si(100) and (111) substrates, and a hetero-epitaxial growth on a AlN buffer layer, which is only a few nanometers in size, grown by MBE onthe Si(111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si(111), in compression on Si(100) and under tension on a AlN buffer layer grown by MBE/Si(111) substrates, respectively. The interface between Si(111) and AlN grown by MBE is abrupt and well defined, contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at a low temperature (<250 °C).

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Section: Introductionmentioning

confidence: 99%

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

et al. 2021

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“…Nowadays, a variety of deposition methods was used to synthesis the AlN thin films including metal organic chemical vapor deposition [6], molecular beam epitaxy [7], reactive magnetron sputtering [3] and hydride vapor phase epitaxy [8]. Despite producing good quality of AlN thin films, those methods have complicated set up and are highly in cost.…”

Section: Introductionmentioning

confidence: 99%

Aluminum Nitride Thin Films Grown by Sol-Gel Spin Coating Technique

Isa

Hassan

2019

SSP

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In this study, aluminum nitride (AlN) thin films were grown on p-type silicon (100) substrate by sol-gel spin coating method. Two types of ethanol-based precursors were prepared, namely, precursors with and without the aid of diethanolamine (DEA). The objective of this work is to investigate the effects of the DEA on the surface morphology, structural and optical properties of the deposited thin films. The coating films were undergone nitridation process under ammonia ambient at 1100 °C for 60 min. The surface morphology and structural properties of the deposited AlN thin films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD results revealed that both samples have AlN (100) preferred orientation. In addition, the crystallinity of sample without the aid of DEA is higher compared to the sample prepared with DEA. While, the AFM results showed that both samples have uniform and smooth surface. The optical properties of AlN thin films was investigated by Raman spectroscopy. For sample without DEA, Raman results showed the present of wurtzite AlN characteristics phonon modes of E2(high) and A1(LO) at 660 cm-1 and 892 cm-1, respectively. Whereas only E2(high) is observed for sample with the aid of DEA. Finally, all the results revealed that the present of DEA has a strong influence on the properties of deposited AlN thin films and film prepared without DEA have better quality.

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A Structural and Optical Look at Functional Materials

Öztürk

2021

Advances in Optoelectronic Materials

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The influence of thickness and ammonia flow rate on the properties of AlN layers

Cited by 21 publications

References 19 publications

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

Aluminum Nitride Thin Films Grown by Sol-Gel Spin Coating Technique

A Structural and Optical Look at Functional Materials

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