The influence of the PZT buffer layer on electrophysical properties of MDM structures with the BST film

Abstract

Films of the composition Ba0.8Sr0.2TiO3 (BST) were synthesized by the method of high-frequency (HF) sputtering on the buffer layer of a ferroelectric film of the composition PbZrxTi1-xO3 (PZT). Comparative results of electrophysical properties of three different metal--dielectric--metal (MDM)-structures are presented: Pt/BST/Ni, Pt/PZT/Ni, and Pt/PZT-BST/Ni. Keywords: metal--dielectric--metal structures, ferroelectric films of composition Ba0.8Sr0.2TiO3, a buffer layer, electrophysical properties.