The influence of the physicochemical processes on the electrical response of Al/p-Si structure with etched surface
Yosef Badali,
Yashar Azizian-Kalandaragh
Abstract:In this paper, the electrochemical etching process is used for surface modification of the p-Si wafer, named as porous silicon (PS), in the metal–semiconductor (MS) type Schottky diode (SD) with a structure of Al/p-Si. Five regions of PS wafer with different etching rates are selected for comparison of them which are called P2, P3, P4, and P5 (P1 is the reference area without porosity). The morphological, structural, and electrical properties of the PS used in the MS-type SD are investigated using field-emissi… Show more
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