The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation

Fu, Chen; Lin, Zhaojun; Cui, Peng; Li, Yuanjie; Zhi‐Jian, Yang; Dai, Gang; Chen, Luan; Liu, Huan; Cheng, Aijie

doi:10.1007/s00339-018-1702-6

Cited by 7 publications

(3 citation statements)

References 26 publications

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“…As a rule the I-V curves of AlGaN/GaN heterostructure Schottky diodes are represented as asymmetrical branches located in the positive half of the Y axis for either positive or negative control voltage [16,17]. The current decreases dramatically as the control voltage tends to zero, the curve has a "beak" shape (Fig.…”

Section: Resultsmentioning

confidence: 99%

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Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures

Enisherlova¹,

Seidman²,

Temper³

et al. 2021

MoEM

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The effect of parameters of plasma enhanced chemical vapor deposition (PECVD) processes for SiNx film fabrication on the electrical parameters of dielectric/АlGaN/GaN structures has been studied. The effect of growing film composition, additional heterostructure surface treatment with nitrogen plasma before dielectric deposition and HF biasing during treatment on the parameters of the С–V and I–V curves of SiNx/АlGaN/GaN structures has been analyzed. We show that films with nitrogen to silicon concentration ratios of 60 and 40% and a high oxygen content exhibit a decrease in the positive fixed charge in the structures although the I–V curves of the structures exhibit current oscillations. Information has been reported on the effect of PECVD process mode on current oscillation parameters, e.g. period and amplitude, and length of I–V curve section in which oscillations occur. Possible explanation of these oscillations has been suggested. Additional nitrogen plasma treatment of heterostructure surface before monosilane supply to the chamber changes the magnitude and sign of fixed charge and reduces the free carrier concentration in the 2D gas channel of SiNx/АlGaN/GaN heterostructures. Experimental evidence has been provided for the effect of PECVD process parameters and surface preparation on the electrical parameters of the heterostructures grown.

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Section: Resultsmentioning

confidence: 99%

“…As noted above the I-V curves of the initial AlGaN/ GaN heterostructures and the dielectric/AlGaN/GaN structures were studied in many works [16,17] dealing with HEMT technology. Little attention however was paid in these works to low current ranges of the I-V curves.…”

Section: Resultsmentioning

confidence: 99%

Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures

Enisherlova¹,

Seidman²,

Temper³

et al. 2021

MoEM

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“…[32] However, a poor interface between a GaN high-electron mobility transistor (HEMT) and an FE HfZrO film causes the degradation of the FE and electrical properties. To realize a high interface quality, a buffer layer such as Si 3 N 4 and Al 2 O 3 , [33][34][35][36] is introduced between FE gate dielectrics and AlGaN/GaN heterostructures. Owing to the wide band gap of Al 2 O 3 , it plays an important role in suppressing the gate leakage current.…”

Section: Introductionmentioning

confidence: 99%

Impact of Al_xGa_1−x barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al₂O₃/AlGaN/GaN MFSHEMTs

Li¹,

Liu²,

Sun³

et al. 2022

Chinese Phys. B

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Ferroelectric (FE) HfZrO/Al2O3 gate stack AlGaN/GaN metal-FE-semiconductor heterostructure field-effect transistors (MFSHEMTs) with varying Al x Ga1-x N barrier thickness and Al composition are investigated and compared by TCAD simulation with non-FE HfO2/Al2O3 gate stack metal-insulator-semiconductor heterostructure field-effect transistors (MISHFETs). Results show that the decrease of the two-dimensional electron gas density with decreasing AlGaN barrier thickness is more effectively suppressed in MFSHEMTs than that in MISHFETs due to the enhanced FE polarization switching efficiency. The electrical characteristics of MFSHEMTs, including transconductance, subthreshold swing, and on-state current, effectively improve with decreasing AlGaN thickness in MFSHEMTs. High Al composition in AlGaN barrier layers that are under 3 nm thickness plays a great role in enhancing the two-dimensional electron gas density and FE polarization in MFSHEMTs, improving the transconductance and the on-state current. The subthreshold swing and threshold voltage can be reduced by decreasing the AlGaN thickness and Al composition in MFSHEMTs, affording favorable conditions for further enhancing the device.

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Drain Schottky contact influence on low-field transport characteristic of AlGaN/GaN heterostructure field-effect transistors

Yang

Wang

et al. 2022

Appl. Phys. A

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The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation

Cited by 7 publications

References 26 publications

Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures

Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures

Impact of Al_xGa_1−x barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al₂O₃/AlGaN/GaN MFSHEMTs

Drain Schottky contact influence on low-field transport characteristic of AlGaN/GaN heterostructure field-effect transistors

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The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation

Cited by 7 publications

References 26 publications

Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures

Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures

Impact of Al x Ga1−x barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs

Drain Schottky contact influence on low-field transport characteristic of AlGaN/GaN heterostructure field-effect transistors

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Impact of Al_xGa_1−x barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al₂O₃/AlGaN/GaN MFSHEMTs