The Influence of the Gate Driver and Common-Source Inductance on the Short-Circuit Behavior of IGBT Modules and Protection

Liu, Xing; Kowalsky, Jens; Herrmann, Clemens; Baumler, Christian; Lutz, Josef

doi:10.1109/tpel.2020.2981427

Cited by 11 publications

(3 citation statements)

References 14 publications

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“…During the lifespan of automotive power modules, various extreme operating conditions may arise due to control unit failures, human errors, or other uncontrollable factors. One of the most common scenarios for automotive power modules is a short circuit 2 of 12 (SC) [1][2][3]. To prevent module or power system damage under SC conditions, insulatedgate bipolar transistors (IGBTs) are designed to withstand high current and voltage conditions for a few microseconds (typically 10 µs), allowing the gate driver to shut down the IGBT before destruction [4].…”

Section: Introductionmentioning

confidence: 99%

The Mechanism of Short-Circuit Oscillations in Automotive-Grade Multi-Chip Parallel Power Modules and an Effective Mitigation Approach

Ma,

Sun,

Liu

et al. 2024

Sensors

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This paper presents an in-depth analysis of the oscillation phenomenon occurring in multi-chip parallel automotive-grade power modules under short-circuit conditions and investigates three suppression methods. We tested and analyzed two commercial automotive-grade power modules, one containing two chips and the other containing a single chip, and found that short-circuit gate oscillations were more likely to occur in multi-chip parallel packaged modules than in single-chip packaged modules. Through experimental and simulation analyses, we observed that gate oscillations were mainly caused by the interaction between internal parasitic parameters of the module and the external drive circuit, and we found that high drive resistance and low common emitter inductance between parallel chips could effectively suppress gate voltage oscillations. We also analyzed the two mainstream suppression schemes, increasing the drive gate resistance and placing the drive capacitors in parallel. Unfortunately, we found that these suppression schemes were not ideal solutions because both schemes changed the switching characteristics of the power module. As an alternative, we propose a simple and effective solution that involves adding parallel connections between the parallel chips. Simulation calculations showed that this optimized method reduced the emitter inductance between parallel chips in the upper bridge arm by about 30% and in the lower bridge arm by 35%. Through short-circuit experiments conducted at different DC bus voltages, it has been verified that the new optimized solution effectively resolves gate oscillation issues without affecting the switching characteristics of the power module.

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Section: Introductionmentioning

confidence: 99%

The Mechanism of Short-Circuit Oscillations in Automotive-Grade Multi-Chip Parallel Power Modules and an Effective Mitigation Approach

Ma,

Sun,

Liu

et al. 2024

Sensors

View full text Add to dashboard Cite

show abstract

“…The high impact ionization generation rate leads to the SC failure in turn-on transient, whereas the thermal runaway is the reason for failures occurring during on-state, at the turn-off and the one occurring some microseconds after turn-off. In [16,17], the influence of the gate drive unit and stray inductance on the SC is investigated in detail. The gate resistance, and the topology of the gate driver output can significantly affect the SC characteristics.…”

Section: Introductionmentioning

confidence: 99%

Voltage division investigation of series short‐circuit fault on SiC MOSFETs and Si IGBTs

Zhang

Wang

Zhang

et al. 2022

IET Power Electronics

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In power electronic systems, when a power device turns on by mistake, there would be at least two devices in the short-circuit (SC) current loop, forming series short-circuit (SSC) fault. In this paper, the dynamic characteristics of SiC MOSFETs, Si IGBTs in SSC are investigated based on the half-bridge circuit. The effect laws of load current and junction temperature to voltage division in SSC are discussed. Taking a three-level (3-L) active neutral point clamped (ANPC) topology based on hybrid utilization of Si IGBT and SiC MOSFET as the research object, the SSC performance is investigated. The theoretical and experimental results show that, in the process of SSC, the voltage division features of SiC MOSFETs and Si IGBTs are different and highly sensitive to circuit parameters. When both SiC MOSFET and Si IGBT are in the SC current loop, the device with a lower saturation current level limits the short circuit current and bears most of the dc-bus voltage. Moreover, in the Si/SiC hybrid 3-L ANPC topology, if the saturation current of selected SiC MOSFETs is higher than that of Si IGBTs, the SC withstanding level of SiC MOSFETs could be improved, thereby reducing the SC protection circuit requirements.

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“…In medium and small applications, the inverter circuit was also widely used (Qiu et al , 2013; Zadeh et al , 2015; Zhang et al , 2015; Mohsenzade et al , 2018). The insulated gate bipolar transistor (IGBT) was the core part of an inverter power supply (Iwamuro and Laska, 2017; Liu et al , 2020). To ensure the reliability of the main circuit power module, it was necessary to set up IGBT drive and protection circuit with good performance (Ji et al , 2014; Xu et al , 2012; Zhang et al , 2018).…”

Section: Introductionmentioning

confidence: 99%

A half-bridge IGBT drive and protection circuit in dielectric barrier discharge power supply

Wang

Lü

Chen

et al. 2021

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Purpose This paper aims to improve the general circuit of driving and protection based on insulated gate bipolar transistor (IGBT) in dielectric barrier discharge power supply by designing a novel half-bridge inverter circuit with discrete components. Design/methodology/approach With one SG3524 chip, the structure based on discrete components is used to design the IGBT drive circuit. The driving waveform is isolated and sent out by photo-coupler 6N137. The protection circuit is realized by Hall sensor directly detecting the main circuit current, supplemented by a few components, including diodes, resistors, capacitors and triodes. It improves the reliability of the protection circuit. Findings In the driving circuit, the phase difference of signals from two channels are 180°. Moreover, when the duty cycle is set at 40%, it can ensure sufficient pulse width modulation response time. In the protection circuit, when over-current occurs, an intermittent output signal is automatically sent out. Furthermore, the over-current response time can be controlled independently. The peak voltage can be adjusted continuously from 0 to 30 kV with its frequency from 8 to 25 kHz and the power output up to 150 W. Originality/value The novel circuit of driving and protection makes not only its structure simpler and easier to be realized but also key parameters, such as frequency, the duty cycle and the driving voltage, continuously adjustable. Moreover, the power supply is suitable for other discharges such as corona discharge and jet discharge.

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The Influence of the Gate Driver and Common-Source Inductance on the Short-Circuit Behavior of IGBT Modules and Protection

Cited by 11 publications

References 14 publications

The Mechanism of Short-Circuit Oscillations in Automotive-Grade Multi-Chip Parallel Power Modules and an Effective Mitigation Approach

The Mechanism of Short-Circuit Oscillations in Automotive-Grade Multi-Chip Parallel Power Modules and an Effective Mitigation Approach

Voltage division investigation of series short‐circuit fault on SiC MOSFETs and Si IGBTs

A half-bridge IGBT drive and protection circuit in dielectric barrier discharge power supply

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