The influence of tetrapod-like ZnO morphology and electrolytes on energy conversion efficiency of dye-sensitized solar cells

Influence of Dye Loading Time and Electrolytes Constituents Ratio on the Performance of Spin Coated ZnO Photoanode Based Dye Sensitized Solar Cells

“…Oxidized dye molecules are reduced by a redox electrolyte, which transports the positive charges by diffusion to a counterelectrode [9][10][11][12][13][14][15] . The ZnO material possesses a wide band gap, low resistance and high light trapping characteristics that make it suitable in solar cells applications [16][17][18][19][20][21][22][23] A high electron diffusion coefficient and a low recombination rate constant are key requirements for fabricating highly efficient dye-sensitized solar cells. Higher dye loadings, which are desirable for inducing higher photon harvesting, are also limited by the low diffusion and high recombination rates of the electrons 24,25 .…”

Morphological and electron mobility studies in nanograss In2O3 DSSC incorporating multi-walled carbon nanotubes

“…Comparatively, the nanograss-like structure caused the electrolyte to diffuse easily into the inner region of photoanode. The D eff of the In 2 O 3 -MWCNT nanograss photoanode increased as more electrons exist since the deep trap was filled [54]. A large D eff provides a fast electron transport in the system where it improves the J sc as seen in Fig.…”

Dual-functional zinc oxide aggregates with reaction time-dependent morphology as the dye-adsorption layer for dye-sensitized solar cells

“…7(a)) were fitted by using an equivalent circuit as shown in Fig. 7(c) based on a diffusion-recombination model [35,36] to extract the electron transport parameters, including the electron transport resistance within the ZnO mesoporous film (R w , R w = r w L, where L is the film thickness), the charge transfer resistance (R k ) (R k = r k / L) related to the recombination of electrons at the ZnO/ electrolyte interface, and the chemical capacitance of the ZnO electrode (C μ , C μ = c μ L). In addition, other circuit elements were introduced to modify the equivalent circuit model, i.e., the series resistance for the total transport resistance of the FTO substrates and external circuits (R S ), the impedance of the diffusion of I 3 − in the electrolyte (Z N ), the resistance (R Pt ) and the capacitance (C Pt ) at the Pt/electrolyte interface, and the resistance (R FTO ) and the capacitance (C FTO ) at the FTO/electrolyte interface, and the resistance (R FZ ) and the capacitance (C FZ ) at the FTO/ZnO interface.…”