The Influence of Superlattice on the Internal Quantum Efficiency of LED Structures with InGaN / GaN Quantum Wells

Generation of Terahertz Radiation in LED Heterostructures with Multiple InGaN/GaN Quantum Wells at Two-Photon Excitation by Femtosecond

“…For these reasons, the signal level of terahertz emission, observed in the present study, was significantly lower, than in [2][3][4][5]. A special feature of our samples is also that they are the functional LED structures [8][9][10] and contain a number of components in addition to the InGaN/GaN layers. In this regard, we additionally checked, if the terahertz signal (for example, due to the optical rectification in GaN) is absent in some of the thin plates of n-and p-GaN and sapphire.…”

Terahertz emission from InGaN/GaN multiple quantum well light-emitting diode heterostructures under two-photon excitation

“…In part this can be explained by the fact that piezoelectric fields were lower due to lower indium content (x=0.12-0.15) in In x Ga 1-x N quantum wells in our samples. Also our samples were first of all designed as LEDs, [6][7][8] and included several heterostructure layers (Fig. 1), which were absent in the samples used in Interpretation of the experimental data requires information about structural and electronic parameters of In x Ga 1-x N solutions and InGaN/GaN structures.…”

Effect of growth temperature of GaN:Mg layer on internal quantum efficiency of LED structures with InGaN/GaN quantum wells

“…The dependence of IQE on excitation power were measured in temperature range 10-300 К. Pulse YAG laser with wavelength 355 nm were used as a pumping source. Detailed description of the measurement condition are presented in [3,4]. EQE was measured at current density 1 A/cm 2 .…”