The influence of structural defects in ZnSe/GaAs heterostructures on luminescence properties

Liu, Q; Lakner, Hubert; Mendorf, C.; Taudt, W.; Heuken, M.; Heime, K.; Kubalek, E.

doi:10.1088/0022-3727/31/19/010

Cited by 4 publications

(2 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3͑c͒. If, in fact, it is the structure obtained experimentally, it may indicate that the surface diffusion of Ga to back-fill the Ga vacancy in the ͑2 ϫ 4͒␤2 substrate reconstruction occurs, for example, during a Se ͑rather than a Zn͒ pre-growth treatment such as that used by Liu et al 28 The substantial Ga-Se bond strength may well stabilize such back-filling as an intermediate structure during this pregrowth treatment. 3͑d͒, being related by one Ga-for-Zn and one As-for-Se interchange and is, therefore, electronically balanced.…”

Section: Results: Anion Interfacesmentioning

confidence: 86%

Anion variations at semiconductor interfaces: ZnSe(100)/GaAs(100) superlattices

Farrell

LaViolette

2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Local interface composition and extended defect density in ZnSe/GaAs(001) and ZnSe/In 0.04 Ga 0.96 As (001) heterojunctions J.We extended our study of heterovalent interfaces between ZnSe͑100͒ and GaAs͑100͒ in superlattices using first-principles, density-functional theory calculations. Here, we concentrate on the changes in interfacial binding energy that occur when the stoichiometry is varied in the anion layer adjacent to the interface. This follows earlier work where the cation stoichiometry was varied. We studied three general categories of simple heterojunctions: those with only As-Zn bonding, those with only Se-Ga bonding, and those with mixed As-Zn and Se-Ga bonding. We also considered more complex interface configurations. Several different variations in interfacial stoichiometry that are conceptually based on the heteroepitaxial growth of ZnSe͑100͒ on the GaAs͑100͒͑2 ϫ 4͒␤2 surface structure were studied. In addition, the effects induced by the presence of vacancies in the vicinity of the surface were investigated. These more complex interfaces are discussed in terms of published experimental results. Finally, the possibility that the energy of the interface can be described in terms of the energy of the bonds that span that interface was also examined. We find that, for all of the 14 interfaces studied, the interface energy can be expressed as a simple sum of the per-bond-pair energies with an average error of less than 3%. Therefore, in these systems, the energies of the interfacial bonds are "additive" to a good approximation.

show abstract

Section: Results: Anion Interfacesmentioning

confidence: 86%

Anion variations at semiconductor interfaces: ZnSe(100)/GaAs(100) superlattices

Farrell

LaViolette

2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

“…The emission spectra can be divided into two important regions: near-band-edge emission (NBE) around 2.8 eV and deep-level emission (DLE) below 2.6 eV. Within the DLE region, emission around 1.95 eV is usually referred to as the self-activated (SA) region and has been linked to distant donor-acceptor pair transitions, especially those involving zinc vacancies (V Zn ) and group III donor impurities 31 – 33 . The NBE region consists of free and donor-bound exciton emission (FX and DX) peaks as well as deep acceptor-bound exciton (I 1 deep ) emission and its phonon replicas.…”

Section: Resultsmentioning

confidence: 99%

Tailoring Heterovalent Interface Formation with Light

Park

Alberi

2017

Sci Rep

View full text Add to dashboard Cite

Integrating different semiconductor materials into an epitaxial device structure offers additional degrees of freedom to select for optimal material properties in each layer. However, interfaces between materials with different valences (i.e. III-V, II-VI and IV semiconductors) can be difficult to form with high quality. Using ZnSe/GaAs as a model system, we explore the use of ultraviolet (UV) illumination during heterovalent interface growth by molecular beam epitaxy as a way to modify the interface properties. We find that UV illumination alters the mixture of chemical bonds at the interface, permitting the formation of Ga-Se bonds that help to passivate the underlying GaAs layer. Illumination also helps to reduce defects in the ZnSe epilayer. These results suggest that moderate UV illumination during growth may be used as a way to improve the optical properties of both the GaAs and ZnSe layers on either side of the interface.

show abstract

Excitonic and pair-related photoluminescence in ZnSe nanowires

Saxena

Yang

Philipose

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

It has been established that deviations from stoichiometry during the growth of ZnSe crystals result in point defects, which influence its electronic properties. We report on detailed photoluminescence results and their systematic analysis for ZnSe nanowires. We studied photoluminescence from vapor-phase grown undoped ZnSe nanowires grown under excess Zn conditions, and in particular the dependence on excitation intensity. Luminescence spectra were characterized by strong near-band-edge luminescence with negligible deep-level emission. We observed excitonic emission at 2.794 eV related to the neutral donor at VSe. The binding energy of the exciton was found to be 7 meV, and that of the donor was 35 meV. Two donor-acceptor pair transitions at 2.714 and 2.686 eV were also observed, which can be related to the defect complexes of native defects with other native defects or with common unintentional shallow donors and acceptors. The ionization energies of both donors were 27 meV, whereas those of the acceptors were 102 and 139 meV, respectively.

show abstract

The influence of structural defects in ZnSe/GaAs heterostructures on luminescence properties

Cited by 4 publications

References 27 publications

Anion variations at semiconductor interfaces: ZnSe(100)/GaAs(100) superlattices

Anion variations at semiconductor interfaces: ZnSe(100)/GaAs(100) superlattices

Tailoring Heterovalent Interface Formation with Light

Excitonic and pair-related photoluminescence in ZnSe nanowires

Contact Info

Product

Resources

About