The Influence of Stress on Aluminum Conductor Life

Turner, T. E.; Wendel, Katrina

doi:10.1109/irps.1985.362089

Cited by 34 publications

(15 citation statements)

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“…The mechanism was complicated by the presence of silicon precipitates in the metallization. Turner et al [1985] noted that the current density in the lines failing from this mode was much less than that noticed in electromigration failures; moreover, the failure rate characteristic decreased with time, unlike the electromigration failures. Turner tried to refute the earlier theory of Curry et al, which attributed the voids in the metallization to silicon nodule formation.…”

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confidence: 91%

“…less than 4 micron wide, in the form of voids and cracks have also been attributed to Coble and Nabarro-Herring creep of the aluminum metallization [Turner 1985]. The source of this creep is a thermal expansion mismatch between the aluminum and the underlying silicon and silicon dioxide.…”

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confidence: 99%

“…where doldt is the stress rate, M is the elastic modulus, a is the atomic volume, B, is the geometric factor (approximately equal to 10), g is the grain size, h is the I film thickness, D, is the lattice diffusion coefficient, f is the correlation factor for diffusion, k is the Boltzmann constant, T is the steady-state temperature, and a is the stress [Turner 1985]. The stress relaxation rate by grain boundary migration (Coble creep) is…”

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confidence: 99%

“…where B, is the geometric factor (approximately equal to 15), and D.6 is the combined grain-boundary diffusion parameter [Turner 1985]. These two mechanisms work together in a thin film on substrate.…”

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confidence: 99%

“…Such voids are the first step in the j formation of open metal lines, weakening the metal line and concentrating line stress in the metal around the void. At lower temperatures, neither grain-boundary diffusion nor grain-matrix diffusion can progress at appreciable rates [Turner 1985]. …”

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The Influence of Temperature on Microelectronic Device Failure Mechanisms. Phase 2

Pecht¹

1993

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confidence: 91%

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confidence: 99%

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The Influence of Temperature on Microelectronic Device Failure Mechanisms. Phase 2

Pecht¹

1993

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Elastoplastic creep analysis of thermal stress and strain in aluminum interconnects of LSIs

Hiraoka

1994

Electron Comm Jpn Pt II

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To study a thermally induced open‐failure mechanism of aluminum interconnects of LSIs, a three‐dimensional (3‐D) simulation using a finite element method was carried out. In this calculation, a creep strain increasing with time in addition to an elastoplastic strain was taken into account. Further, the effect of a manufacturing process on a stress and a strain induced in an aluminum layer was examined using a simulation for a subsequent stacking of oxide‐layer/aluminum film/protective layer on an Si chip. The condition for a 3‐D plasticity to occur was calculated in which case a strain was represented using the von Mises criteria. As a result, after the manufacturing process is completed, the stress is found to decrease significantly with time, while a plastic strain is kept constant. However, the creep strain responsible for the failure is found to increase. the temperature dependence of the creep strain also was studied. the three different results previously reported, i.e., the lifetime becomes shorter as the temperature rises, there is no temperature dependence, and the shortest lifetime is at about 150°C are all found to be possible. the calculation was applied to the multilayered interconnects and the creep strain is shown to decrease by more than a few tens percent in an aluminum layer.

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