The influence of sintering temperature and silicon carbide percent on the compression properties

Abstract

Articles you may be interested inThe influence of impurities and planar defects on the infrared properties of silicon carbide films Appl. Phys. Lett. 98, 191904 (2011); 10.1063/1.3585098 Influence of substrate temperature on growth of nanocrystalline silicon carbide by reactive magnetron sputtering J. Appl. Phys. 98, 024313 (2005); 10.1063/1.1985975 Spall strengths of sintered and hot pressed silicon carbide AIP Conf.Influence of doping on the structural and optoelectronic properties of amorphous and microcrystalline silicon carbide Abstract. Powder metallurgy (P/M) is the processing of parts from metal powders. In (P/M) technology can be produce homogenous and net shape products, to generate properties not attainable through conventional metal working processes or to manufacture parts to net shape, this reason has motivated the need to find a cost effective technological production method for these composites. In this study the effect of Sintering Temperature and Silicon Carbide Percent on the Compression Properties of the aluminum silicon carbide produced by powder metallurgy is investigated by using the heat treatment of the composite. This method produce a local fusing and welding of the aluminum particles while using aluminum powder with thick oxide layer surrounding the particles prevents the all melting of the composite. Sintering temperatures between 500 and 850 °C were applied after cold compaction on samples containing ( 0%, 5%, 10%, 15%, 20%, 25% 30% and 35% ) of silicon carbide powder then the specimens examined to study the compression properties. The results show that the compression properties of the samples increases with increasing the silicon carbide percent and sintering temperature. Also, to obtain good compression properties the sintering temperature are found to be 600°C for the aluminum with no silicon carbide content, 700 °C for composite containing both 5% and 10% SiC, 750°C for composite containing 15% SiC, 800 °C for composite containing 20% ,25% SiC, 850°C for composite containing 30% ,35% SiC.