The influence of Si-doping to the growth rate and yellow luminescence of GaN grown by MOCVD

Li, Shuti; Mo, Chunlan; Wang, Li; Xiong, Chuanbing; Peng, Xuexin; Jiang, Fengyi; Deng, Zhenbo; Gong, Dawei

doi:10.1016/s0022-2313(01)00206-x

Cited by 23 publications

(15 citation statements)

References 13 publications

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“…Due to the substitution of Si dopants in gallium lattice sites, an increase in the Si-doping concentration can reduce the number of gallium vacancies. Similar phenomena are also been observed in previous reports [8,9].…”

Section: Article In Presssupporting

confidence: 92%

Si doping of metal-organic chemical vapor deposition grown gallium nitride using ditertiarybutyl silane metal-organic source

Fong

Leung

Surya

2007

Journal of Crystal Growth

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Section: Article In Presssupporting

confidence: 92%

Si doping of metal-organic chemical vapor deposition grown gallium nitride using ditertiarybutyl silane metal-organic source

Fong

Leung

Surya

2007

Journal of Crystal Growth

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“…However, by increasing the input current the yellow band emission rapidly saturated and its proportion to QW emission decreased to negligible level, which can be seen from the high injection measurement. Possible causes for yellow luminescence are shallow dopants in n-GaN, [18][19][20] carbon impurities in i-GaN (Refs. [21][22][23] or gallium vacancy complexes in i-GaN.…”

mentioning

confidence: 99%

Diffusion injected multi-quantum well light-emitting diode structure

Riuttanen

Kivisaari

Nykänen

et al. 2014

Applied Physics Letters

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“…In addition, the other external impurities such as O and C were also may take part to the formation of yellow luminescence. 23 …”

Section: Resultsmentioning

confidence: 99%

The Impact of ZnO Nanoparticle Interlayer on the Growth and Morphology of Broom-Like Single Crystalline Gallium Nitride

Uthirakumar¹,

Suh²,

Hong³

2008

j nanosci nanotechnol

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Broom-like single crystalline gallium nitride (GaN) nanomaterials have been successfully grown on Si (100) substrates through ammoniating the new type of complex precursor hexafluoroammonium gallate [(NH4)3GaF6], under a constant flow of ammonia at 900 degrees C in a quartz tube. This research mainly deals with the effect of zinc oxide (ZnO) interlayer on the growth and morphological changes of GaN nanoparticles. Broom-like GaN nanomaterials were obtained upon the influence of very fine ZnO nanoparticle interlayer in between the silicon substrate and the Ga source complex materials. On the other hand, well organized micron size hexagonal GaN particles were resulted in absence of ZnO interlayer. The transformation of hexagonal to broom-like GaN nanomaterials was predominant due to improved surface compatibility between the Si substrate and Ga source complex by the ZnO interlayer. The starting point for the transformation was indentified by controlling the process time. The structure and morphology changes of the GaN product were investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). SEM images demonstrate the difference in their morphological changes of single crystalline GaN upon the ZnO nanoparticles layer deposition.

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The influence of Si-doping to the growth rate and yellow luminescence of GaN grown by MOCVD

Cited by 23 publications

References 13 publications

Si doping of metal-organic chemical vapor deposition grown gallium nitride using ditertiarybutyl silane metal-organic source

Si doping of metal-organic chemical vapor deposition grown gallium nitride using ditertiarybutyl silane metal-organic source

Diffusion injected multi-quantum well light-emitting diode structure

The Impact of ZnO Nanoparticle Interlayer on the Growth and Morphology of Broom-Like Single Crystalline Gallium Nitride

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