The Influence of RF power, pressure and substrate temperature on optical properties of RF Sputtered vanadium pentoxide thin films

Abstract

The V2O5 films were deposited on glass substrates which produce using "radio frequency (RF)"power supply and Argon gas technique. The optical properties were investigated by, UV spectroscopy at "radio frequency" (RF) power ranging from 75 - 150 Watt and gas pressure, (0.03, 0.05 and 0.007 Torr), and substrate temperature (359, 373,473 and 573) K. The UV-Visible analysis shows that the average transmittance of all films in the range 40-65 %. When the thickness has been increased the transhumance was decreased from (65-40) %. The values of energy band gap were lowered from (3.02-2.9 eV) with the increase of thickness the films in relation to an increase in power, The energy gap decreased (2.8 - 2.7) eV with an increase in the pressure and substrate temperature respectively.

Relationship Between Structural and Optical Properties in Vanadium Pentoxide

“…Whereas the band gap of the SPT samples was found in the range of 2.2 and 2.4 eV, in the case of RF-MS the band gap is significantly wider, with values ranging from 2.82 eV to 2.90 eV at 70.1 nm. Studies that have reported optical bandgap values for RF sputtered V 2 O 5 films on Si reported bandgaps values ranging from 2.5 to 3.3 eV [46][47][48]. The origin of the UV absorption was extensively studied by Meyn et al [49], who reported that the UV light absorption in the oxides can be enhanced by tetravalent vanadium ion V 4+ presence.…”