The influence of phonon thermal conductivity on thermoelectric figure of merit of bulk nanostructured materials with tunneling contacts

Булат, Л. П.; Kossakovski, Dmitri; Pshenay-Severin, D. A.

doi:10.48550/arxiv.1209.4492

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S6 Energy Band Lineups1

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2014

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“…As a result, experimentally measured electron affinities are not very reliable. (This is actually the case with both SnTe and Bi 2 Te 3 , for which very different results have been reported in the literature [65][66][67][68][69][70][71].) Second, the surface reconstruction and surface energy states at the interface of two semiconductors are not necessarily the same as those on their free surfaces, making the energy balance consideration to be more complicated.…”

Section: S6 Energy Band Lineupsmentioning

confidence: 88%

Topological surface transport in epitaxial SnTe thin films grown on Bi2Te3

et al. 2014

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The topological crystalline insulator SnTe has been grown epitaxially on a Bi 2 Te 3 buffer layer by molecular beam epitaxy. In a 30-nm-thick SnTe film, p-a n dn-type carriers are found to coexist, and Shubnikov-de Haas oscillation data suggest that the n-type carriers are Dirac fermions residing on the SnTe (111) surface. This transport observation of the topological surface state in a p-type topological crystalline insulator became possible due to a downward band bending on the free SnTe surface, which appears to be of intrinsic origin.

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