2023
DOI: 10.1007/s00170-023-11805-3
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The influence of pH and H2O2 on surface quality and material removal rate during W-CMP

Abstract: In chemical mechanical polishing (CMP) process, chemical action is generally determined by pH regulator and oxidant in the polishing slurry. In this paper, tungsten was polished by CMP, and the material removal mechanism was discussed. The in uence of pH values and H 2 O 2 concentrations on surface quality and material removal rate (MRR) were studied deeply. The oxidation and dissolution kinetics of tungsten/tungsten oxide (W/WO x ) during CMP process were investigated by electrochemical analysis and XPS. In a… Show more

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Cited by 8 publications
(3 citation statements)
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“…In the absence of H 2 O 2 , the aluminum surface exhibited minimal chemical activity due to the absence of an oxidizing agent and was subjected to abrasive mechanical action alone, which resulted in a low aluminum removal rate and significant surface abrasion. 19,20 Upon the addition of H 2 O 2 , aluminum was oxidized to Al 3+ , which formed complexes with the hydrolyzed ions of alanine, thereby accelerating the removal rate of aluminum. With further increases in the H 2 O 2 concentration, an Al 2 O 3 passivation layer was formed.…”
Section: Resultsmentioning
confidence: 99%
“…In the absence of H 2 O 2 , the aluminum surface exhibited minimal chemical activity due to the absence of an oxidizing agent and was subjected to abrasive mechanical action alone, which resulted in a low aluminum removal rate and significant surface abrasion. 19,20 Upon the addition of H 2 O 2 , aluminum was oxidized to Al 3+ , which formed complexes with the hydrolyzed ions of alanine, thereby accelerating the removal rate of aluminum. With further increases in the H 2 O 2 concentration, an Al 2 O 3 passivation layer was formed.…”
Section: Resultsmentioning
confidence: 99%
“…The preparation of polishing solution is an important part of CMP, which is related to the surface quality and material removal rate of the sample. 16 In the past, the oxidant of the polishing solution was selected generally with high corrosive chemical reagents, such as nitric acid and hydrofluoric acid. 18 In the traditional polishing experiment, porous polyurethane pads were used for polishing pads, W3.5 white corundum was used for abrasives, glycerol concentration was 3%, polyvinyl nonylphenol ether 0.3% was used as the other polishing solution components, oxalic acid and ethylenediamine were used to adjust the pH.…”
Section: Methodsmentioning
confidence: 99%
“…Consequently, this study necessitates the usage of a pulse laser for precise machining purposes. [30][31][32] The experimental machining system consists of an all-solid-state UV nanosecond laser (parameters are shown in Table II), a beam expander, a mirror, a scanning galvanometer, Ftheta lens, a computer, and a water-cooling device, as shown in Fig. 2.…”
Section: Experimental Designmentioning
confidence: 99%