The temperature dependence of silicon (Si)-based thin film single junction solar cells whose intrinsic absorbers were fabricated near the phase boundary of hydrogenated amorphous silicon (a-Si:H) to hydrogenated microcrystalline silicon (µc-Si:H) was investigated. By varying the hydrogen dilution ratio, wide bandgap protocrytalline silicon (pc-Si:H) and the mixed-phase of a-Si:H and µc-Si:H absorber layers were obtained. Photo J-V characteristics were measured under AM1.5 illumination at ambient temperature in the range of 25-75 o C. We found that the pc-Si:H solar cells which exist below the a-Si:H and µc-Si:H transition boundary exhibited the lowest temperature coefficient (TC) for conversion efficiency (η) and open-circuit voltage (V oc ), while the solar cells fabricated at the mixed-phase of a-Si:H and µc-Si:H revealed a relatively high TC for η and V oc . Experimental results indicated that pc-Si:H which fabricated at the silane concentration (SC), SC = [SiH 4 ]/([SiH 4 ]+[H 2 ]), of 5.75% showed the highest initial η, low TC for η and degradation ratio. This material at this condition is a promising for using as an absorber layer of single junction or top cell for tandem solar cells which operating in high temperature regions.