The influence of NiFe thickness of top-electrode on exchange coupling parameters of IrMn based MTJ

Stobiecki, T.; Kim, C. G.; Hu, Yongkang; Czapkiewicz, M.; Kanak, J.; Wrona, Jerzy; Tsunoda, Masakiyo; Takahashi, M.

doi:10.1016/j.jmmm.2003.12.311

Cited by 5 publications

(1 citation statement)

References 6 publications

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“…Additionally, a small hysteresis exists in the minor loop, which could be attributed to the magnetic hysteresis of CoFeB FL and Néel "orange-peel" coupling due to the roughness of the interface between the MgO barrier and CoFeB layer. [35,36] In contrast, the TMR ratio is very small along the major direction, which is consistent with the previous report. [37] These results strongly indicate that the MTJ array is in a sensory configuration.…”

Section: Resultssupporting

confidence: 92%

Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures

Huang¹,

Wang²,

Liu³

et al. 2022

Chinese Phys. B

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Because of the wide selectivity of ferromagnetic and ferroelectric (FE) components, electric-field (E-field) control of magnetism with via strain mediation can be easily realized through composite multiferroic heterostructures. Here, an MgO-based magnetic tunnel junction (MTJ) is chosen rationally as ferromagnetic constitution and a high-activity (001)-Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-0.3PT) single crystal is selected as FE component to create a multiferroic MTJ/FE hybrid structure. The shape of tunneling magnetoresistance (TMR) vs. in situ E-fields imprints the butterfly loop of piezo-strain of the FE without magnetic field biasing. The E-field-controlled change of the TMR ratio is up to -0.27% without magnetic-field bias. Moreover, when a typical magnetic field (~±10-Oe) is applied along the minor axis of the MTJ, the butterfly loop is changed significantly by E-fields relative to that without magnetic field biasing. This suggests that the E-field-controlled junction resistance is spin-dependent and correlated with magnetization switching in the free layer of the MTJ. In addition, based on such a multiferroic heterostructure, a strain-gauge factor up to approximately 40 is achieved, which decreases further with a sign change from positive to negative with increasing magnetic fields. This multiferroic hybrid structure is a promising avenue to control TMR through E-fields in low-power-consumption spintronic and straintronic devices at room temperature.

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Section: Resultssupporting

confidence: 92%