2010
DOI: 10.1088/1367-2630/12/7/073001
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The influence of nanoscale morphology on the resistivity of cluster-assembled nanostructured metallic thin films

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Cited by 41 publications
(29 citation statements)
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“…The difference in the resistivity values between atomassembled and cluster-assembled lms is due to the presence of an extremely large number of defects and grain boundaries typical of the low-energy cluster beam deposition regime [38][39][40][41] resulting in highly porous lms. 42,43 The nanogranular and porous structure of the Au clusterassembled lms affects their electrical behavior, for thickness far beyond the percolation threshold, in a dramatic and unexpected way: we observe either a remarkable departure from an ohmic behavior and the onset of a resistive switching feature. The I-V curve of the cluster-assembled lm is reported in Fig.…”
Section: Resultsmentioning
confidence: 82%
“…The difference in the resistivity values between atomassembled and cluster-assembled lms is due to the presence of an extremely large number of defects and grain boundaries typical of the low-energy cluster beam deposition regime [38][39][40][41] resulting in highly porous lms. 42,43 The nanogranular and porous structure of the Au clusterassembled lms affects their electrical behavior, for thickness far beyond the percolation threshold, in a dramatic and unexpected way: we observe either a remarkable departure from an ohmic behavior and the onset of a resistive switching feature. The I-V curve of the cluster-assembled lm is reported in Fig.…”
Section: Resultsmentioning
confidence: 82%
“…The growth of cluster-assembled metallic films has been studied mainly in the sub-monolayer regime with particular focus on transition metal clusters [76,77], noble metals [42,[78][79][80], bismuth [81][82][83], tin [84] and antimony [85,86]. Nucleation and growth process of Bi and Sb thin films grown by atomic and cluster deposition has been characterized by transmission electron microscopy (TEM) showing the high sensitivity of the film structure to the size of incident precursors [34,81].…”
Section: Cluster-assembled Film Growthmentioning
confidence: 99%
“…Our approach relies on the fact that the electrical properties of cluster-assembled films grown from the gas phase evolve in a significantly different way compared to atom-assembled films. 20 In particular, in the percolative regime, electrical conduction can be precisely controlled by SCBD, 21 thus allowing the tuning of the resistance while keeping constant the dimensions of the resistors and optimizing the use of raw material.…”
Section: 2mentioning
confidence: 99%
“…20,21 This indicates that the capability of SCBD of producing in one step resistors with different dimensions in a wide range of resistance values, is due to the capability of working in a well determined region of the electrical percolation curve of the cluster-assembled films. 21,23 In order to quantify the amount of clusters deposited on the substrate, we use a quantity called equivalent thickness (t eq ) defined as the thickness of a film produced by an equivalent amount of nanoparticles deposited onto a rigid flat substrate. 23 The equivalent thickness is obtained in real time, during the deposition process, by the use of a quartz crystal microbalance placed near the sample, allowing us to stop the deposition at the achievement of the required thickness and hence resistance.…”
Section: 2mentioning
confidence: 99%